| No. |
Part Name |
Description |
Manufacturer |
| 61 |
M28C64-30NS1T |
64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection |
ST Microelectronics |
| 62 |
M28C64-30NS3T |
64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection |
ST Microelectronics |
| 63 |
M28C64-30NS6T |
64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection |
ST Microelectronics |
| 64 |
M28C64-A30NS1T |
64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection |
ST Microelectronics |
| 65 |
M28C64-A30NS3T |
64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection |
ST Microelectronics |
| 66 |
M28C64-A30NS6T |
64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection |
ST Microelectronics |
| 67 |
MXD1013C_D030 |
3-in-1 silicon delay line. Output delay 30ns. |
MAXIM - Dallas Semiconductor |
| 68 |
MXD1013PA030 |
3-in-1 silicon delay line. Output delay 30ns. |
MAXIM - Dallas Semiconductor |
| 69 |
MXD1013PD030 |
3-in-1 silicon delay line. Output delay 30ns. |
MAXIM - Dallas Semiconductor |
| 70 |
MXD1013SA030 |
3-in-1 silicon delay line. Output delay 30ns. |
MAXIM - Dallas Semiconductor |
| 71 |
MXD1013SE030 |
3-in-1 silicon delay line. Output delay 30ns. |
MAXIM - Dallas Semiconductor |
| 72 |
MXD1013UA030 |
3-in-1 silicon delay line. Output delay 30ns. |
MAXIM - Dallas Semiconductor |
| 73 |
PB-IRF530NS |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 74 |
PB-IRF630NS |
Leaded 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 75 |
PB-IRF9530NS |
Leaded -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 76 |
PB-IRL530NS |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 77 |
PMEM4030NS |
NPN transistor/Schottky rectifier module |
Philips |
| 78 |
RBQ30NS45A |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
| 79 |
RBQ30NS45AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 80 |
RBQ30NS45AFHTL |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 81 |
RBQ30NS45ATL |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
| 82 |
RBQ30NS65A |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
| 83 |
RBQ30NS65AFH |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 84 |
RBQ30NS65AFHTL |
High Efficiency , High Reliability Type Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 85 |
RBQ30NS65ATL |
High Efficiency , High Reliability Type Schottky Barrier Diode |
ROHM |
| 86 |
RBR30NS30A |
Schottky Barrier Diode |
ROHM |
| 87 |
RBR30NS30ATL |
Schottky Barrier Diode |
ROHM |
| 88 |
RGT30NS65D |
650V 15A Field Stop Trench IGBT |
ROHM |
| 89 |
RGT30NS65DGTL |
650V 15A Field Stop Trench IGBT |
ROHM |
| 90 |
SN74AS30NSR |
8-Input Positive-NAND Gates |
Texas Instruments |
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