| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4186 |
Zener Diode 100V 1W |
Motorola |
| 2 |
1N4186 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 3 |
1N4186A |
Zener Diode 100V 1W |
Motorola |
| 4 |
1N4186A |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 5 |
1N4186B |
Zener Diode 100V 1W |
Motorola |
| 6 |
1N4186B |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 7 |
2N4186 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 8 |
2N4186 |
THYRISTOR |
Motorola |
| 9 |
2N4186 |
SILICON CONTROLLED RECTIFIERS |
Motorola |
| 10 |
2N4186 |
Thyristor SCR 800V 200A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 11 |
2SC4186 |
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 12 |
AOD4186 |
Single MV MOSFETs (40V - 400V) |
Alpha & Omega Semiconductor |
| 13 |
IC PACKAGE |
Plastic plug-in package 20 A 8 DIN 41866 8 pins, DIP, 20 A 14 DIN 41866 14 pins DIP, 20A16 DIN41866 16 pins, 20A18 18 pins |
Siemens |
| 14 |
IC PACKAGE |
Plastic plug-in package 20 A 8 DIN 41866 8 pins, DIP, 20 A 14 DIN 41866 14 pins DIP, 20A16 DIN41866 16 pins, 20A18 18 pins |
Siemens |
| 15 |
IC PACKAGE |
Plastic plug-in package 20 A 8 DIN 41866 8 pins, DIP, 20 A 14 DIN 41866 14 pins DIP, 20A16 DIN41866 16 pins, 20A18 18 pins |
Siemens |
| 16 |
IC PACKAGES |
Plastic plug-in Package 20 B 40 DIN 41866 40 pins, DIP, Miniature plastic package (G) 20 pins (SO20L) |
Siemens |
| 17 |
IC PACKAGES |
Plastic plug-in Package 20 B 24 DIN 41866 24 pins, DIP, 20 B 28 pins |
Siemens |
| 18 |
IC PACKAGES |
Plastic plug-in Package 20 A 20 DIN 41866 20 pins, DIP, 20 D 22 pins |
Siemens |
| 19 |
IC PACKAGES |
Plastic Package Outlines, P-DIP, 4, 6 8, 14 pins, 20A DIN 41866 |
Siemens |
| 20 |
K4R441869A |
Direct RDRAM |
Samsung Electronic |
| 21 |
K4R441869A-N(M) |
K4R271669A-N(M):Direct RDRAM� Data Sheet |
Samsung Electronic |
| 22 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 23 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 24 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 25 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 26 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 27 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 28 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 29 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 30 |
K4R441869AN-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
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