No. |
Part Name |
Description |
Manufacturer |
31 |
K4R441869B |
Direct RDRAM |
Samsung Electronic |
32 |
K4R441869B |
K4R271669B:Direct RDRAM� Data Sheet |
Samsung Electronic |
33 |
K4R441869B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
34 |
K4R441869B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
35 |
K4R441869B-N(M)CK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
36 |
MAX4186 |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
37 |
MAX4186EEE |
Single/Dual/Quad / 270MHz / 1mA / SOT23 / Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
38 |
MAX4186ESD |
Single/Dual/Quad / 270MHz / 1mA / SOT23 / Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
39 |
MAX4186ESD+ |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
40 |
MAX4186ESD+T |
Single/Dual/Quad, 270MHz, 1mA, SOT23, Current-Feedback Amplifiers with Shutdown |
MAXIM - Dallas Semiconductor |
41 |
SGA-4186 |
DC-5000 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER |
Stanford Microdevices |
42 |
SN74186 |
Families of Compatible TTL Circuits |
Texas Instruments |
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