| No. |
Part Name |
Description |
Manufacturer |
| 1 |
504CJ |
Dual 4 Input Gate |
Amelco Semiconductor |
| 2 |
534CJ |
Dual 4 Input Gate |
Amelco Semiconductor |
| 3 |
544CJ |
Dual 4 Input Gate with expander |
Amelco Semiconductor |
| 4 |
574CJ |
Dual 4 Input Gate |
Amelco Semiconductor |
| 5 |
584CJ |
Dual 4 Input Gate with expander |
Amelco Semiconductor |
| 6 |
ADC0844CJ |
4.5 V to 6.0 V, 5 mA, 8-bit uP compatible A/D converter with multiplexer option |
National Semiconductor |
| 7 |
DG304CJ |
CMOS Analog Switchs |
MAXIM - Dallas Semiconductor |
| 8 |
DG384CJ |
General Purpose CMOS Analog Switches |
MAXIM - Dallas Semiconductor |
| 9 |
DG444CJ |
Improved / Quad / SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 10 |
DG444CJ+ |
Improved, Quad, SPST Analog Switches |
MAXIM - Dallas Semiconductor |
| 11 |
DM2504CJ |
Successive Approximation Registers |
National Semiconductor |
| 12 |
DS2004CJ |
High Current/Voltage Darlington Drivers |
National Semiconductor |
| 13 |
DS96F174CJ |
EIA-485/EIA-422 Quad Differential Drivers [Life-time buy] |
National Semiconductor |
| 14 |
ICL7664CJA |
500mW; V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
| 15 |
IH5044CJE |
General-purpose CMOS analog switch. Double pole, single throw (DPST) |
MAXIM - Dallas Semiconductor |
| 16 |
IH5144CJE |
High-Level CMOS Analog Switches |
Intersil |
| 17 |
IH5144CJE |
Low Power Fast CMOS Analog Switches |
MAXIM - Dallas Semiconductor |
| 18 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 19 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 20 |
KM416C1004CJ-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 21 |
KM416C1004CJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
| 22 |
KM416C1004CJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
| 23 |
KM416C1004CJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 24 |
KM416C1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 25 |
KM416C1004CJL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 26 |
KM416C1004CJL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 27 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 28 |
KM416C1204CJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
| 29 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 30 |
KM416C1204CJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
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