No. |
Part Name |
Description |
Manufacturer |
31 |
KM416C1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
32 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
33 |
KM416V1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
34 |
KM416V1004CJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
35 |
KM416V1004CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
36 |
KM416V1004CJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
37 |
KM416V1004CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
38 |
KM416V1004CJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
39 |
KM416V1004CJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
40 |
KM416V1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
41 |
KM416V1004CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
42 |
KM416V1004CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
43 |
KM416V1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
44 |
KM416V1204CJ-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
45 |
KM416V1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
46 |
KM416V1204CJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
47 |
KM416V1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
48 |
KM416V1204CJ-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
49 |
KM416V1204CJ-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
50 |
KM416V1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
51 |
KM416V1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
52 |
KM416V1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
53 |
LM494CJ |
Pulse Width Modulated Control Circuit |
National Semiconductor |
54 |
LT1014CJ |
Quad Precision Op Amp |
Linear Technology |
55 |
LT1044CJ8 |
Switched Capacitor Voltage Conveter |
Linear Technology |
56 |
LT1054CJ8 |
Switched-Capacitor Voltage Converter with Regulator |
Linear Technology |
57 |
LT1124CJ8 |
Dual/Quad Low Noise/ High Speed Precision Op Amps |
Linear Technology |
58 |
LT1194CJ8 |
Video Difference Amplifier |
Linear Technology |
59 |
LTC1044CJ8 |
Switched Capacitor Voltage Converter |
Linear Technology |
60 |
LTC1064-4CJ |
Low Noise/8th Order/ Clock Sweepable Cauer Lowpass Filter |
Linear Technology |
| | | |