| No. |
Part Name |
Description |
Manufacturer |
| 1 |
24H1001-2R |
50 Watt DC-DC Converters |
Power-One |
| 2 |
54H10J |
Triple 3-Input NAND Gate |
Motorola |
| 3 |
74H10J |
Triple 3-Input NAND Gate |
Motorola |
| 4 |
74H10N |
Triple 3-Input NAND Gate |
Motorola |
| 5 |
D210D |
3 NAND gates with 3 inputs each, TTL fast series, possibly equivalent SN74H10N |
RFT |
| 6 |
D44H10 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 7 |
D44H10 |
POWER TRANSISTORS(10A,30-80V,50W) |
MOSPEC Semiconductor |
| 8 |
D44H10 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS |
Motorola |
| 9 |
D44H10 |
Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 10 |
D44H10 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
ON Semiconductor |
| 11 |
D44H10 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 12 |
GJH121/74H10N |
Triple 3-input NAND gate |
Mullard |
| 13 |
ITT54H10 |
Triple 3-Input positive NAND Gates |
ITT Semiconductors |
| 14 |
ITT74H10 |
Triple 3-Input positive NAND Gates |
ITT Semiconductors |
| 15 |
SN74H101 |
AND-OR Gated J-K Negative EDGE Triggered F-F with Preset |
Texas Instruments |
| 16 |
SN74H102 |
AND Gated J-K Negative EDGE Triggered F-F with Preset and Clear |
Texas Instruments |
| 17 |
SN74H103 |
Dual J-K Negative EDGE Triggered F-F with Clear |
Texas Instruments |
| 18 |
SN74H106 |
Dual J-K Negative EDGE Triggered F-F with Preset and Clear |
Texas Instruments |
| 19 |
SN74H108 |
Dual J-K Negative EDGE Triggered F-F with Preset |
Texas Instruments |
| 20 |
T54H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
| 21 |
T54H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
| 22 |
T74H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
| 23 |
T74H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
| 24 |
TC54H1024F-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 25 |
TC54H1024F-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 26 |
TC54H1024P-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 27 |
TC54H1024P-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 28 |
UCY74H10 |
Trzykrotna trzywej�ciowa bramka NAND |
Ultra CEMI |
| | | |
