No. |
Part Name |
Description |
Manufacturer |
61 |
S54H106B |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
62 |
S54H106F |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
63 |
S54H106W |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
64 |
S54H108 |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
65 |
S54H108A |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
66 |
S54H108F |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
67 |
S54H108W |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
68 |
S54H10A |
Triple 3-Input Positive NAND Gate |
Signetics |
69 |
S54H10F |
Triple 3-Input Positive NAND Gate |
Signetics |
70 |
S54H10W |
Triple 3-Input Positive NAND Gate |
Signetics |
71 |
SN74H101 |
AND-OR Gated J-K Negative EDGE Triggered F-F with Preset |
Texas Instruments |
72 |
SN74H102 |
AND Gated J-K Negative EDGE Triggered F-F with Preset and Clear |
Texas Instruments |
73 |
SN74H103 |
Dual J-K Negative EDGE Triggered F-F with Clear |
Texas Instruments |
74 |
SN74H106 |
Dual J-K Negative EDGE Triggered F-F with Preset and Clear |
Texas Instruments |
75 |
SN74H108 |
Dual J-K Negative EDGE Triggered F-F with Preset |
Texas Instruments |
76 |
T54H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
77 |
T54H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
78 |
T74H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
79 |
T74H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
80 |
TC54H1024F-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
81 |
TC54H1024F-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
82 |
TC54H1024P-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
83 |
TC54H1024P-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
84 |
UCY74H10 |
Trzykrotna trzywej�ciowa bramka NAND |
Ultra CEMI |
| | | |