| No. |
Part Name |
Description |
Manufacturer |
| 1 |
30HFU |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
| 2 |
30HFU(R)-100 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
| 3 |
30HFU(R)-200 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
| 4 |
30HFU(R)-300 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
| 5 |
30HFU(R)-400 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
| 6 |
30HFU(R)-500 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
| 7 |
30HFU(R)-600 |
SUPER FAST RECTIFIER DIODE 30 Amp 60ns |
International Rectifier |
| 8 |
A42L0616S-60 |
60ns 1M x 16bit CMOS dynamic ram with EDO page mode |
AMIC Technology |
| 9 |
A42L0616S-60L |
60ns 1M x 16bit CMOS dynamic ram with EDO page mode |
AMIC Technology |
| 10 |
A42L0616V-60 |
60ns 1M x 16bit CMOS dynamic ram with EDO page mode |
AMIC Technology |
| 11 |
A42L0616V-60L |
60ns 1M x 16bit CMOS dynamic ram with EDO page mode |
AMIC Technology |
| 12 |
ACT-F128K8N-060F6Q |
High speed 1 Megabit monolithic FLASH. Speed 60ns. |
Aeroflex Circuit Technology |
| 13 |
ACT-F128K8N-060F7Q |
High speed 1 Megabit monolithic FLASH. Speed 60ns. |
Aeroflex Circuit Technology |
| 14 |
ACT-F128K8N-060P4Q |
High speed 1 Megabit monolithic FLASH. Speed 60ns. |
Aeroflex Circuit Technology |
| 15 |
AS4C14400-60JC |
1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 60ns |
Alliance Semiconductor |
| 16 |
AS4C14400-60TC |
1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 60ns |
Alliance Semiconductor |
| 17 |
AS4C14405-60JC |
1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 60ns |
Alliance Semiconductor |
| 18 |
AS4C14405-60TC |
1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 60ns |
Alliance Semiconductor |
| 19 |
AS4C256K16E0-60JC |
T(rac): 60ns; V(cc): 4.5 to 5.5V; high speed 256K x 16 CMOS DRAM (EDO) |
Alliance Semiconductor |
| 20 |
AS4LC256K16E0-60JC |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time |
Alliance Semiconductor |
| 21 |
AS4LC256K16E0-60TC |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time |
Alliance Semiconductor |
| 22 |
DS1100LU-60 |
3.3V 5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
| 23 |
DS1100LZ-60 |
3.3V 5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
| 24 |
DS1100M-60 |
5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
| 25 |
DS1100U-60 |
5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
| 26 |
DS1100Z-60 |
5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
| 27 |
GLT4160L04-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 28 |
GLT4160L04E-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 29 |
GLT4160L04E-60TC |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 30 |
GLT4160L04S-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
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