No. |
Part Name |
Description |
Manufacturer |
91 |
HM514100DS-6 |
4,194,304-word x 1-bit dynamic RAM, 60ns |
Hitachi Semiconductor |
92 |
HM514258AJP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
93 |
HM514258AP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
94 |
HM514258AZP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
95 |
HM514260CJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
96 |
HM514260CJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
97 |
HM514260CLJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
98 |
HM514260CLJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
99 |
HM514260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
100 |
HM514260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
101 |
HM514400AJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
102 |
HM514400ALJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
103 |
HM514400ALR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
104 |
HM514400ALRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
105 |
HM514400ALS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
106 |
HM514400ALT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
107 |
HM514400ALTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
108 |
HM514400ALTZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
109 |
HM514400ALZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
110 |
HM514400AR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
111 |
HM514400ARR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
112 |
HM514400AS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
113 |
HM514400ASLJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
114 |
HM514400ASLR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
115 |
HM514400ASLRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
116 |
HM514400ASLS-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
117 |
HM514400ASLT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
118 |
HM514400ASLTT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
119 |
HM514400ASLZ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
120 |
HM514400AT-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
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