No. |
Part Name |
Description |
Manufacturer |
181 |
HY51VS17403HGT-6 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
Hynix Semiconductor |
182 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
183 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
184 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
185 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
186 |
HY51VS65163HGJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
187 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
188 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
189 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
190 |
HY534256AJ-60 |
256K x 4-bit CMOS DRAM, 60ns |
Hynix Semiconductor |
191 |
HY534256ALJ-60 |
256K x 4-bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
192 |
HY534256ALS-60 |
256K x 4-bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
193 |
HY534256AS-60 |
256K x 4-bit CMOS DRAM, 60ns |
Hynix Semiconductor |
194 |
HYB5116400BT-60 |
4M x 4 Bit FPM DRAM 5 V 4k 60ns |
Infineon |
195 |
IR2011PBF |
V(offset): 200V; 1A; V(out): 10-20V; 80 & 60ns (20ns - max); high and low side driver. For audio class D amplifiers, high power DC-DC SMPS converters, etc. |
International Rectifier |
196 |
IS41C16256-60K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
197 |
IS41C16256-60KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
198 |
IS41C16256-60T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
199 |
IS41C16256-60TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
200 |
IS41LV16256-60K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
201 |
IS41LV16256-60KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
202 |
IS41LV16256-60T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
203 |
IS41LV16256-60TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
204 |
K4E640812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
205 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
206 |
K4E640812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
207 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
208 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
209 |
K4E640812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
210 |
K4E640812C-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
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