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Datasheets for 60NS

Datasheets found :: 703
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 HY51VS17403HGT-6 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns Hynix Semiconductor
182 HY51VS18163HGJ-6 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns Hynix Semiconductor
183 HY51VS18163HGLJ-6 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Hynix Semiconductor
184 HY51VS18163HGLT-6 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Hynix Semiconductor
185 HY51VS18163HGT-6 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns Hynix Semiconductor
186 HY51VS65163HGJ-6 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns Hynix Semiconductor
187 HY51VS65163HGLJ-6 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power Hynix Semiconductor
188 HY51VS65163HGLT-6 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power Hynix Semiconductor
189 HY51VS65163HGT-6 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns Hynix Semiconductor
190 HY534256AJ-60 256K x 4-bit CMOS DRAM, 60ns Hynix Semiconductor
191 HY534256ALJ-60 256K x 4-bit CMOS DRAM, 60ns, low power Hynix Semiconductor
192 HY534256ALS-60 256K x 4-bit CMOS DRAM, 60ns, low power Hynix Semiconductor
193 HY534256AS-60 256K x 4-bit CMOS DRAM, 60ns Hynix Semiconductor
194 HYB5116400BT-60 4M x 4 Bit FPM DRAM 5 V 4k 60ns Infineon
195 IR2011PBF V(offset): 200V; 1A; V(out): 10-20V; 80 & 60ns (20ns - max); high and low side driver. For audio class D amplifiers, high power DC-DC SMPS converters, etc. International Rectifier
196 IS41C16256-60K 256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns ICSI
197 IS41C16256-60KI 256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns ICSI
198 IS41C16256-60T 256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns ICSI
199 IS41C16256-60TI 256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns ICSI
200 IS41LV16256-60K 256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns ICSI
201 IS41LV16256-60KI 256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns ICSI
202 IS41LV16256-60T 256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns ICSI
203 IS41LV16256-60TI 256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns ICSI
204 K4E640812B-JC-6 8M x 8bit CMOS dynamic RAM with extended data out, 60ns Samsung Electronic
205 K4E640812B-JCL-6 8M x 8bit CMOS dynamic RAM with extended data out, 60ns Samsung Electronic
206 K4E640812B-TC-6 8M x 8bit CMOS dynamic RAM with extended data out, 60ns Samsung Electronic
207 K4E640812B-TCL-6 8M x 8bit CMOS dynamic RAM with extended data out, 60ns Samsung Electronic
208 K4E640812C-JC-6 8M x 8bit CMOS dynamic RAM with extended data out, 60ns Samsung Electronic
209 K4E640812C-JCL-6 8M x 8bit CMOS dynamic RAM with extended data out, 60ns Samsung Electronic
210 K4E640812C-TC-6 8M x 8bit CMOS dynamic RAM with extended data out, 60ns Samsung Electronic


Datasheets found :: 703
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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