No. |
Part Name |
Description |
Manufacturer |
271 |
KM416C1204BJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
272 |
KM416C1204BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
273 |
KM416C1204BT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
274 |
KM416C1204CJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
275 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
276 |
KM416C1204CJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
277 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
278 |
KM416C1204CT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
279 |
KM416C1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
280 |
KM416C1204CT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
281 |
KM416C1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
282 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
283 |
KM416C254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
284 |
KM416C254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
285 |
KM416C254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
286 |
KM416C256DJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V |
Samsung Electronic |
287 |
KM416C256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
288 |
KM416C256DLT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
289 |
KM416C256DT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V |
Samsung Electronic |
290 |
KM416C4000BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
291 |
KM416C4000CS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
292 |
KM416C4004CS-6 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 60ns |
Samsung Electronic |
293 |
KM416C4100BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
294 |
KM416C4100CS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
295 |
KM416C4104CS-6 |
4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 4K refresh, 60ns |
Samsung Electronic |
296 |
KM416V1000BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
297 |
KM416V1000BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
298 |
KM416V1000BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
299 |
KM416V1000BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
300 |
KM416V1000CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
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