| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1206N102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 2 |
1206N104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
| 3 |
6N100F |
Power MOSFETs |
IXYS Corporation |
| 4 |
D16N10 |
16A 1000 Rectifier Diode |
IPRS Baneasa |
| 5 |
D16N10R |
16A 1000 Rectifier Diode |
IPRS Baneasa |
| 6 |
FDP036N10A |
N-Channel PowerTrench� MOSFET 100V, 214A, 3.6m? |
Fairchild Semiconductor |
| 7 |
IXFE36N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 8 |
IXFH6N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 9 |
IXFH6N100F |
Power MOSFETs |
IXYS Corporation |
| 10 |
IXFH6N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 11 |
IXFM6N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 12 |
IXFN36N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 13 |
IXFT6N100F |
Power MOSFETs |
IXYS Corporation |
| 14 |
IXFT6N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 15 |
KU086N10F |
General Description |
Korea Electronics (KEC) |
| 16 |
KU086N10P |
General Description |
Korea Electronics (KEC) |
| 17 |
MTD6N10 |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
Motorola |
| 18 |
MTD6N10E |
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
Motorola |
| 19 |
MTD6N10E |
6 Amp DPAK Surface Mount Products, N-Channel, VDSS 100 |
ON Semiconductor |
| 20 |
MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 21 |
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 22 |
MTV6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 23 |
MTV6N100E |
6 Amp D3PAK Surface Mount Products, N-Channel, VDSS 1000 |
ON Semiconductor |
| 24 |
MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 25 |
MTW6N100 |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 26 |
MTW6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 27 |
MTW6N100E |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 28 |
MTW6N100E-D |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 29 |
NM27C256N100 |
256K-Bit (32K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 30 |
OM6N100NK |
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| | | |
