| No. |
Part Name |
Description |
Manufacturer |
| 61 |
PRN11016N1001JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 62 |
PRN11016N1002J |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 63 |
PRN11016N1002JR |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 64 |
PRN11016N1002JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 65 |
PRN11016N10R0J |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 66 |
PRN11016N10R0JR |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 67 |
PRN11016N10R0JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 68 |
STD6N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 69 |
STD6N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 70 |
STD6N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 71 |
STH6N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 72 |
STH6N100 |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 73 |
STH6N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 74 |
STH6N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 75 |
STH6N100FI |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 76 |
STH6N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 77 |
STP16N10L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 78 |
STP16N10L |
N - CHANNEL 100V - 0.14 Ohm - 16A - TO-220 POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 79 |
STP16N10L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 80 |
SUD06N10-225L |
N-Channel 100-V (D-S) 175C MOSFET |
Vishay |
| 81 |
SUU06N10-225L |
N-Channel 100-V (D-S) 175C MOSFET |
Vishay |
| | | |
