No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE6V440A |
TRANSILTM |
ST Microelectronics |
2 |
1.5KE6V440CA |
TRANSILTM |
ST Microelectronics |
3 |
BZW04-6V4 |
Unidirectional and bidirectional Transient Voltage Suppressor Diodes |
Diotec Elektronische |
4 |
BZW04-6V4 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
5 |
BZW04-6V4 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
6 |
BZW04-6V4 |
TRANSILTM |
ST Microelectronics |
7 |
BZW04-6V4 |
Discrete Devices -Diode-TVS |
Taiwan Semiconductor |
8 |
BZW04-6V4B |
TRANSIL |
ST Microelectronics |
9 |
BZW04-6V4B |
Discrete Devices -Diode-TVS |
Taiwan Semiconductor |
10 |
BZW04P6V4 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
11 |
BZW04P6V4 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
12 |
BZW06-6V4 |
Unidirectional and bidirectional Transient Voltage Suppressor Diodes |
Diotec Elektronische |
13 |
BZW06-6V4 |
Diode TVS Single Uni-Dir 6.4V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
14 |
BZW06-6V4 |
TRANSIL |
ST Microelectronics |
15 |
BZW06-6V4 |
Discrete Devices -Diode-TVS |
Taiwan Semiconductor |
16 |
BZW06-6V4B |
Diode TVS Single Bi-Dir 6.4V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
17 |
BZW06-6V4B |
TRANSIL |
ST Microelectronics |
18 |
BZW06-6V4B |
Discrete Devices -Diode-TVS |
Taiwan Semiconductor |
19 |
BZW06-6V4BRL |
TRANSIL |
ST Microelectronics |
20 |
BZW06-6V4P |
Diode TVS Single Uni-Dir 6.4V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
21 |
K6F2016V4D FAMILY |
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
22 |
K6F2016V4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
23 |
K6F2016V4E-EF55 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
24 |
K6F2016V4E-EF70 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
25 |
K6F2016V4E-F |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
26 |
K6T4016V4C, K6T4016U4C FAMILY |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Data Sheet |
Samsung Electronic |
27 |
KM416V4000B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
28 |
KM416V4000BS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
29 |
KM416V4000BS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
30 |
KM416V4000BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
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