No. |
Part Name |
Description |
Manufacturer |
61 |
KM416V4100BS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
62 |
KM416V4100C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
63 |
KM416V4100CS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
64 |
KM416V4100CS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
65 |
KM416V4100CS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
66 |
KM416V4100CS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
67 |
KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
68 |
KM416V4100CS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
69 |
KM416V4104B |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
70 |
KM416V4104BS-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
71 |
KM416V4104BS-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
72 |
KM416V4104BS-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
73 |
KM416V4104BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
74 |
KM416V4104BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
75 |
KM416V4104BSL-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
76 |
KM416V4104C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
77 |
KM416V4104CS-45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
78 |
KM416V4104CS-50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
79 |
KM416V4104CS-60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
80 |
KM416V4104CS-L45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
81 |
KM416V4104CS-L50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
82 |
KM416V4104CS-L60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
83 |
LH6V4256 |
CMOS 1M (256K x 4) Dynamic RAM |
SHARP |
84 |
LH6V4256D-10 |
CMOS 1M(256K x 4) dynamic RAM |
SHARP |
85 |
LH6V4256K-10 |
CMOS 1M(256K x 4) dynamic RAM |
SHARP |
86 |
LH6V4256T-10 |
CMOS 1M(256K x 4) dynamic RAM |
SHARP |
87 |
MGFC36V4450A |
4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
88 |
MGFK36V4045 |
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
89 |
MI-P6V4-IXA |
Military Chassis Mount DC-DC Converters 10 to 300W Single, Dual, Triple Outputs |
Vicor Corporation |
90 |
MI-P6V4-IXV |
Military Chassis Mount DC-DC Converters 10 to 300W Single, Dual, Triple Outputs |
Vicor Corporation |
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