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Datasheets for 75

Datasheets found :: 2794
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No. Part Name Description Manufacturer
1 1075MP 75 W, 50 V, 1025-1150 MHz common base transistor GHz Technology
2 1504-375D Delay 375 +/-18.8 ns, Fixed dip delay line Td/Tr=5 Data Delay Devices Inc
3 1504-75A Delay 75 +/-3.8 ns, Fixed dip delay line Td/Tr=5 Data Delay Devices Inc
4 1504-75D Delay 75 +/-3.8 ns, Fixed dip delay line Td/Tr=5 Data Delay Devices Inc
5 1505-75B Delay 75 +/-3.5 ns, 5-TAP SIP delay line Td/Tr=3 Data Delay Devices Inc
6 1513-75Y Delay 75 +/-3.8 ns, fixed SIP delay line Td/Tr=5 Data Delay Devices Inc
7 15KP170A Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. Panjit International Inc
8 15KP170CA Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. Panjit International Inc
9 1775 T-1 3/4 subminiature, midget screw lamp. 6.3 volts, 0.075 amps. Gilway Technical Lamp
10 1A175 IA175 ULTR-LINEAR ISOLATION AMPLIFIER Intronics
11 1N116 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
12 1N117 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
13 1N118 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
14 1N118A 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
15 1N126 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
16 1N126A 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
17 1N149 Silicon Microwave X-band Mixer: f=9,375 MHz NF=8.3 dB Motorola
18 1N156 Silicon Microwave X-band Mixer: f=9,375 MHz Motorola
19 1N263 Germanium Microwave X-band Mixer f=9,375 MHz NF=7.5 dB Motorola
20 1N281 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
21 1N292 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
22 1N314 75 V, 500 mA, gold bonded germanium diode BKC International Electronics
23 1N4148 75 V, 500 mW high conductance ultra fast switching diode BKC International Electronics
24 1N4149 75 V, 500 mW high conductance ultra fast switching diode BKC International Electronics
25 1N4150-1 75 V, 500 mW silicon switching diode BKC International Electronics
26 1N4151 500mW 75 Volt Silicon Epitaxial Diode Micro Commercial Components
27 1N4153-1 75 V, 500 mW silicon switching diode BKC International Electronics
28 1N4154-1 75 V, 500 mW silicon switching diode BKC International Electronics
29 1N4446 75 V, 500 mW high conductance ultra fast switching diode BKC International Electronics
30 1N4447 75 V, 500 mW high conductance ultra fast switching diode BKC International Electronics


Datasheets found :: 2794
Page: | 1 | 2 | 3 | 4 | 5 |



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