No. |
Part Name |
Description |
Manufacturer |
31 |
1N4449 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
32 |
1N4449 |
High conductance ultra fast switching diode. Working inverse voltage 75 V. |
Fairchild Semiconductor |
33 |
1N4454 |
400mW 75 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
34 |
1N447 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
35 |
1N454 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
36 |
1N459 |
175 V, 500 mW low leakage diode |
BKC International Electronics |
37 |
1N459A |
175 V, 500 mW low leakage diode |
BKC International Electronics |
38 |
1N463A |
175 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
39 |
1N4761A |
75 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
40 |
1N4940 |
Germanium Microwave Ka-band Mixer, f=9,375 MHz NF=6.5dB |
Motorola |
41 |
1N499 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
42 |
1N5267A |
75 V, 1.7 mA, zener diode |
Leshan Radio Company |
43 |
1N5267AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 75 V. Tolerance +-10%. |
Microsemi |
44 |
1N5267BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 75 V. Tolerance +-5%. |
Microsemi |
45 |
1N5267C |
75 V, 1.7 mA, zener diode |
Leshan Radio Company |
46 |
1N5267UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 75 V. |
Microsemi |
47 |
1N5343B |
7.5 V, 175 mA, 5 W glass passivated zener diode |
Fagor |
48 |
1N5352B |
15 V, 75 mA, 5 W glass passivated zener diode |
Fagor |
49 |
1N5353B |
16 V, 75 mA, 5 W glass passivated zener diode |
Fagor |
50 |
1N5374B |
75 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
51 |
1N5374B |
75 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
52 |
1N5946 |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
53 |
1N5946A |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
54 |
1N5946B |
75 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
55 |
1N5946C |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
56 |
1N5946D |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
57 |
1N627 |
75 V, 500 mW general purpose diode |
BKC International Electronics |
58 |
1N629 |
175 V, 500 mW general purpose diode |
BKC International Electronics |
59 |
1N6292 |
75 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
60 |
1N6292A |
75 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
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