| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP210 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A. |
Panjit International Inc |
| 2 |
15KP210C |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A. |
Panjit International Inc |
| 3 |
1G-76 |
TRANSITRON 1G76 OUTLINE |
Transitron Electronic |
| 4 |
27C1028 |
CMOS 1048576 BIT UV ERASABLE READ ONLY MEMORY |
Fujitsu Microelectronics |
| 5 |
AC153/AC176 paired |
Germanium PNP/NPN paired Transistors |
Siemens |
| 6 |
ADSP-CM407F |
ARM Cortex M4 Mixed-Signal Control Processor with Precision 16 bit ADCs in 24x24mm 176 lead LQFP |
Analog Devices |
| 7 |
ADSP-CM408F |
ARM Cortex M4 Mixed-Signal Control Processor with High Precision 16 bit ADCs in 24x24mm 176 lead LQFP |
Analog Devices |
| 8 |
AGM3224V-MC-FBD-T |
0.3-7.0V; number of dots: 240 x 320dots; dot size:0.061 x 0.215mm; dot pitch:0.076 x 0.23mm; AZ display |
AZ Displays |
| 9 |
AGM3224V-MC-FBS-T |
0.3-7.0V; number of dots: 240 x 320dots; dot size:0.061 x 0.215mm; dot pitch:0.076 x 0.23mm; AZ display |
AZ Displays |
| 10 |
AGM3224V-NC-FBD-T |
0.3-7.0V; number of dots: 240 x 320dots; dot size:0.061 x 0.215mm; dot pitch:0.076 x 0.23mm; AZ display |
AZ Displays |
| 11 |
AGM3224V-NC-FBS-T |
0.3-7.0V; number of dots: 240 x 320dots; dot size:0.061 x 0.215mm; dot pitch:0.076 x 0.23mm; AZ display |
AZ Displays |
| 12 |
AM29F080 |
8 Megabit (1,048,576 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 13 |
AM29F800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
| 14 |
AM29LV008 |
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
Advanced Micro Devices |
| 15 |
AM29LV800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory |
Advanced Micro Devices |
| 16 |
AM29LV800B-100 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 17 |
AM29LV800B-120 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 18 |
AM29LV800B-150 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 19 |
AM29LV800B-90R |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 20 |
AM29LV800T |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 21 |
AM29LV800T-100 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 22 |
AM29LV800T-120 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 23 |
AM29LV800T-150 |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 24 |
AM29LV800T-90R |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory |
Advanced Micro Devices |
| 25 |
APU0594WE-TY |
76 COM/80 SEG controller for dot matrix LCD |
ANPEC Electronics Corporation |
| 26 |
ATL25 |
The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi |
Atmel |
| 27 |
ATL35 |
The ATL35 series ASIC family is fabricated on a 0.35 micron CMOS process with up to four levels of metal. This family features arrays with up to 2.7 million routable gates and 976 pins. The high density and high pin count capabilities of t |
Atmel |
| 28 |
BF495D |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 76 hFE |
Continental Device India Limited |
| 29 |
BZW04-376 |
376 V, 1 mA, 1 W, glass passivated junction transient voltage suppressor |
General Instruments |
| 30 |
CAT93C76 (A) |
8-kb, 3 MHz @ 4.5 V, 1 MHz @ 2.5 V, 500 kHz @ 1.8 V, Die Rev A |
Catalyst Semiconductor |
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