No. |
Part Name |
Description |
Manufacturer |
91 |
HM530281TT-20 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
92 |
HM530281TT-25 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
93 |
HM530281TT-34 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
94 |
HM530281TT-45 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
95 |
HM621100A |
1048576 word / 1 Bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
96 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
97 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
98 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
99 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
100 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
101 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
102 |
HY51VS18163HGJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
103 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
104 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
105 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
106 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
107 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
108 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
109 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
110 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
111 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
112 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
113 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
114 |
IRDC3876 |
User Guide for the IR3876 Evaluation Board |
International Rectifier |
115 |
LC378100QM |
8 MEG (1048576 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
116 |
LC378100QT |
8 MEG (1048576 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
117 |
LM1973 |
Micro-Pot 3-Channel 76 dB Audio Attenuator with Mute |
National Semiconductor |
118 |
LM1973 |
Micro-Pot 3-Channel 76 dB Audio Attenuator with Mute |
Texas Instruments |
119 |
LM1973M |
Micro-Pot 3-Channel 76 dB Audio Attenuator with Mute |
National Semiconductor |
120 |
LM1973M/NOPB |
Micro-Pot 3-Channel 76 dB Audio Attenuator with Mute 20-SOIC 0 to 70 |
Texas Instruments |
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