| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0242.080UA |
Barrier network fuse. Axial leaded. Ampere rating .080. Color coding green. |
Littelfuse |
| 2 |
0242.080UAT1 |
Barrier network fuse. Axial leaded, taped . Ampere rating .080. Color coding green. |
Littelfuse |
| 3 |
0242.080UR |
Barrier network fuse. Surface mount. Ampere rating 0.080. Color coding green. |
Littelfuse |
| 4 |
0242.100UAT1 |
Barrier network fuse. Axial leaded, taped . Ampere rating .080. Color coding blue. |
Littelfuse |
| 5 |
0662.400HXLL |
LT-5 tm fast-acting fuse. Long lead (bulk) 100 pieces. Ampere rating .400, voltage rating 250, nominal resistance cold ohms 180. |
Littelfuse |
| 6 |
0662.400HXSL |
LT-5 tm fast-acting fuse. Short lead (bulk) 100 pieces. Ampere rating .400, voltage rating 250, Nominal resistance cold ohms 180. |
Littelfuse |
| 7 |
0662.400ZRLL |
LT-5 tm fast-acting fuse. Long lead (tape and reel) 750 pieces. Ampere rating .400, voltage rating 250, nominal resistance cold ohms 180. |
Littelfuse |
| 8 |
1.5KE200 |
Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 9 |
1.5KE200C |
Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 10 |
1.5KE400CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 380.0 V(min), 420.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 11 |
15KW180 |
180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 12 |
15KW180A |
180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 13 |
15KW280 |
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 14 |
15KW280A |
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 15 |
20KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 16 |
20KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 17 |
20KW280 |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 18 |
20KW280A |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 19 |
274.005 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/200. Nominal resistance cold 280.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 20 |
274.010 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/100. Nominal resistance cold 80.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 21 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 22 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 23 |
5KP180 |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 24 |
5KP180A |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 25 |
CDL13007 |
80.000W Switching NPN Plastic Leaded Transistor. 400V Vceo, 6.000A Ic, 8 - 40 hFE. |
Continental Device India Limited |
| 26 |
CJF100 |
80.000W Darlington NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 200 hFE. Complementary CJF105 |
Continental Device India Limited |
| 27 |
CJF101 |
80.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. Complementary CJF106 |
Continental Device India Limited |
| 28 |
CJF102 |
80.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 200 hFE. Complementary CJF107 |
Continental Device India Limited |
| 29 |
CJF105 |
80.000W Darlington PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 200 hFE. Complementary CJF100 |
Continental Device India Limited |
| 30 |
CJF106 |
80.000W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. Complementary CJF101 |
Continental Device India Limited |
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