| No. |
Part Name |
Description |
Manufacturer |
| 61 |
DV16100 |
CHARACTER LCD MODULE display format: 16x1; module size: 80.0x36.0x10.0; viewing size: 64.5x13.8; dot size: 0.56x0.75; character size: 3.07x6.56; |
Data International CO.LTD. |
| 62 |
DV16275 |
CHARACTER LCD MODULE display format: 16x2; module size: 100.0x39x13.0; viewing size: 80.0x20.4; dot size: 0.75x0.90; character size: 4.07x7.76; |
Data International CO.LTD. |
| 63 |
DV16276 |
CHARACTER LCD MODULE display format: 16x2; module size: 100.0x39x13.0; viewing size: 80.0x20.4; dot size: 0.75x0.90; character size: 4.07x7.76; |
Data International CO.LTD. |
| 64 |
DV20210 |
CHARACTER LCD MODULE display format: 20x2; module size: 180.0x40.0x10.5; viewing size: 149.0x23.0; dot size: 1.12x1.12; character size: 6.00x9.66; |
Data International CO.LTD. |
| 65 |
E265 |
Red T-1 flat top LED. Lens diffused. Luminous intensity at 10mA: 40.0mcd(min), 80.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max). |
Gilway Technical Lamp |
| 66 |
MJE13007 |
80.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 5 - 30 hFE. |
Continental Device India Limited |
| 67 |
MQF80.167-1000/07 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
| 68 |
NTE5294AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 180.0V. Zener test current Izt = 68mA. |
NTE Electronics |
| 69 |
NX8562LB803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. Anode ground. FC-PC connector. |
NEC |
| 70 |
NX8562LF803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. Anode floating. FC-PC connector. |
NEC |
| 71 |
NX8563LB803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. FC-PC connector. Anode ground. |
NEC |
| 72 |
NX8563LF803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. FC-PC connector. Anode floating. |
NEC |
| 73 |
SA180 |
180.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 74 |
SA180A |
180.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 75 |
SA180C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 180.00 V. Test current IT = 1 mA. |
Bytes |
| 76 |
SA180CA |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 180.00 V. Test current IT = 1 mA. |
Bytes |
| 77 |
SD1080CS-T3 |
Reverse voltage: 80.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 78 |
TC1014 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated systems, the devices’ CMOS construction e |
Microchip |
| 79 |
TC1015 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated systems, the devices’ CMOS construction e |
Microchip |
| 80 |
TC1185 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated systems, the devices’ CMOS construction e |
Microchip |
| 81 |
TC1223 |
The TC1223 and TC1224 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated systems, the devices CMOS constructio neliminates wasted |
Microchip |
| 82 |
TC1224 |
The TC1223 and TC1224 are high accuracy (typically ±0.5%) CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for battery-operated systems, the devices CMOS constructio neliminates wasted |
Microchip |
| 83 |
TC2014 |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Total supply current is typically 55�A (20 to 60 times lower than in bipolar regulators!). |
Microchip |
| 84 |
TC2015 |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Total supply current is typically 55�A (20 to 60 times lower than in bipolar regulators!). |
Microchip |
| 85 |
TC2185 |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators such as the LP2980. Total supply current is typically 55�A (20 to 60 times lower than in bipolar regulators!). |
Microchip |
| 86 |
TIP100 |
80.000W Darlington NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 1000 - 20000 hFE. |
Continental Device India Limited |
| 87 |
TIP101 |
80.000W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 1000 - 20000 hFE. |
Continental Device India Limited |
| 88 |
TIP102 |
80.000W Darlington NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 200 hFE. |
Continental Device India Limited |
| 89 |
TIP105 |
80.000W Darlington PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 200 hFE. |
Continental Device India Limited |
| 90 |
TIP106 |
80.000W Darlington PNP Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 200 hFE. |
Continental Device India Limited |
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