No. |
Part Name |
Description |
Manufacturer |
1 |
16F872 |
28-Pin, 8-Bit CMOS FLASH Microcontroller |
Microchip |
2 |
1N1872 |
Rectifier Diode |
Motorola |
3 |
1N3872 |
Silicon Planar Diode |
ITT Semiconductors |
4 |
1N3872 |
Signal Diode |
Motorola |
5 |
1N4872 |
Rectifier Diode 15kV 1.25A |
Motorola |
6 |
1N5872A |
500mW UNIBLOC silicon oxide-passivated zener regulator diode 30V |
Motorola |
7 |
1N872 |
Rectifier Diode 400V |
Motorola |
8 |
2N1872 |
Silicon Controlled Rectifier |
Microsemi |
9 |
2N1872 |
THYRISTOR |
Motorola |
10 |
2N1872A |
Silicon Controlled Rectifier |
Microsemi |
11 |
2N1872A |
THYRISTOR |
Motorola |
12 |
2N2872 |
Silicon PNP Transistor |
Motorola |
13 |
2N3872 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
14 |
2N3872 |
SCRs 35 Ampere RMS, 400V |
Motorola |
15 |
2N3872 |
THYRISTOR |
Motorola |
16 |
2N3872 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) |
Motorola |
17 |
2N3872 |
35A Silicon Controlled Rectifier (reverse-blocking triode thyristor) |
RCA Solid State |
18 |
2N4872 |
Silicon PNP Transistor |
Motorola |
19 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
20 |
2N5872 |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
21 |
2N5872 |
7A Complementary Silicon Medium-Power PNP Trasnsistor |
Motorola |
22 |
2N5872 |
PNP Power Transistor TO-3 |
National Semiconductor |
23 |
2N5872 |
PNP silicon power transistor 115W |
National Semiconductor |
24 |
2N5872 |
Trans GP BJT PNP 80V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
25 |
2N5872 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
26 |
2N5872 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
27 |
2N5872 |
Silicon PNP Power Transistor, TO-3 package, NPN Complement 2N5874 |
Silicon Transistor Corporation |
28 |
2N5872A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
29 |
2N5872A |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
30 |
2N5872B |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
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