| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N5872B |
Silicon PNP EPIBASE AF Power Transistor |
IPRS Baneasa |
| 32 |
2N5874 |
Silicon NPN Power Transistor, TO-3 package, PNP Complement 2N5872 |
Silicon Transistor Corporation |
| 33 |
2SA872 |
Silicon PNP Transistor |
Hitachi Semiconductor |
| 34 |
2SA872 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 35 |
2SA872 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 36 |
2SA872A |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 37 |
2SA872A |
Silicon PNP Transistor |
Hitachi Semiconductor |
| 38 |
2SA872A |
Transistors>Amplifiers/Bipolar |
Renesas |
| 39 |
2SB1568 |
Power Transistor (−80V, −4A) |
ROHM |
| 40 |
2SB1568 |
Power Transistor (−80V, −4A) |
ROHM |
| 41 |
2SB1709 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 42 |
2SB1709 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 43 |
2SB1732 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 44 |
2SB1732 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 45 |
2SC3872 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
Panasonic |
| 46 |
2SK2872 |
N-channel MOS-FET |
Fuji Electric |
| 47 |
2SK2872-01MR |
N-channel MOS-FET |
Fuji Electric |
| 48 |
5962-8872101PA |
Dual Very Low Noise Precision Operational Amplifier |
Analog Devices |
| 49 |
5962-88724013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 50 |
5962-8872401LA |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 51 |
5962-88724043X |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 52 |
5962-8872404LA |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 53 |
5962-88726083X |
High-speed UV-erasable programmable logic device,83MHz |
Atmel |
| 54 |
5962-8872608LA |
High-speed UV-erasable programmable logic device,83MHz |
Atmel |
| 55 |
5962-88726093X |
High-speed UV-erasable programmable logic device,58MHz |
Atmel |
| 56 |
5962-8872609LA |
High-speed UV-erasable programmable logic device,58MHz |
Atmel |
| 57 |
5962-88726113X |
High-speed UV-erasable programmable logic device,92MHz |
Atmel |
| 58 |
5962-8872611LX |
High-speed UV-erasable programmable logic device,92MHz |
Atmel |
| 59 |
5962-88727012A |
Octal Bus Transceivers With 3-State Outputs |
Texas Instruments |
| 60 |
5962-8872701RA |
Octal Bus Transceivers With 3-State Outputs |
Texas Instruments |
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