| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP100 |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 2 |
15KP100C |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 3 |
15KP130A |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A. |
Panjit International Inc |
| 4 |
15KP130CA |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A. |
Panjit International Inc |
| 5 |
15KP160A |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. |
Panjit International Inc |
| 6 |
15KP160CA |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. |
Panjit International Inc |
| 7 |
1N3823 |
Zener regulator diode. Nom zener voltage 3.9 V. 1 W. |
Motorola |
| 8 |
1N4565A |
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V. |
Motorola |
| 9 |
1N4570A |
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V. |
Motorola |
| 10 |
1N4575A |
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V. |
Motorola |
| 11 |
1N4580A |
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V. |
Motorola |
| 12 |
1N4622UR-1 |
3.9 volt zener diode |
Compensated Devices Incorporated |
| 13 |
1N4730 |
3.9 V, 1 W silicon zener diode |
BKC International Electronics |
| 14 |
1N4730 |
1 W silicon zener diode. Nominal zener voltage 3.9 V. |
Fairchild Semiconductor |
| 15 |
1N4730 |
1 WATT, 3.9 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 16 |
1N4730A |
3.9 V, 1 W silicon zener diode |
BKC International Electronics |
| 17 |
1N4730A |
Voltage regulator diode. Working voltage (nom) 3.9 V . |
Philips |
| 18 |
1N4754A |
39 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 19 |
1N5228 |
500 mW silicon zener diode. Nominal zener voltage 3.9 V. |
Fairchild Semiconductor |
| 20 |
1N5228 |
500mW, 3.9 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 21 |
1N5228A |
3.9 V, 20 mA, zener diode |
Leshan Radio Company |
| 22 |
1N5228AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. Tolerance +-10%. |
Microsemi |
| 23 |
1N5228BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. Tolerance +-5%. |
Microsemi |
| 24 |
1N5228C |
3.9 V, 20 mA, zener diode |
Leshan Radio Company |
| 25 |
1N5228D |
3.9 V, 20 mA, zener diode |
Leshan Radio Company |
| 26 |
1N5228UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.9 V. |
Microsemi |
| 27 |
1N5249 |
500mW, 19 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 28 |
1N5249A |
19 V, 6.6 mA, zener diode |
Leshan Radio Company |
| 29 |
1N5249AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 19 V. Tolerance +-10%. |
Microsemi |
| 30 |
1N5249BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 19 V. Tolerance +-5%. |
Microsemi |
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