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Datasheets for 9 V

Datasheets found :: 872
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 1N5249C 19 V, 6.6 mA, zener diode Leshan Radio Company
32 1N5249D 19 V, 6.6 mA, zener diode Leshan Radio Company
33 1N5249UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 19 V. Microsemi
34 1N5259A 39 V, 3.2 mA, zener diode Leshan Radio Company
35 1N5259AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 39 V. Tolerance +-10%. Microsemi
36 1N5259BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 39 V. Tolerance +-5%. Microsemi
37 1N5259C 39 V, 3.2 mA, zener diode Leshan Radio Company
38 1N5259D 39 V, 3.2 mA, zener diode Leshan Radio Company
39 1N5259UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 39 V. Microsemi
40 1N5356B 19 V, 65 mA, 5 W glass passivated zener diode Fagor
41 1N5356B 19 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
42 1N5366B 39 V, 30 mA, 5 W glass passivated zener diode Fagor
43 1N5366B 39 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
44 1N5520A 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-10% tolerance. Jinan Gude Electronic Device
45 1N5520B 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-5% tolerance. Jinan Gude Electronic Device
46 1N5939B 39 V, 1.5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
47 1N6285 39 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode Fagor
48 1N6285A 39 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode Fagor
49 1N6285C 39 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode Fagor
50 1N6285CA 39 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode Fagor
51 1N748 3.9 V, 400 mW silicon linear diode BKC International Electronics
52 1N748 500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). Fairchild Semiconductor
53 1N748 400mW, 3.9 Volts Silicon Glass Zener Diode ITT Semiconductors
54 1N748A 3.9 V, 400 mW silicon linear diode BKC International Electronics
55 1N748A 500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-5% tolerance. Jinan Gude Electronic Device
56 1N748B 3.9 V, 20 mA, zener diode Leshan Radio Company
57 1N748C 500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-2% tolerance. Jinan Gude Electronic Device
58 1N748C 3.9 V, 20 mA, zener diode Leshan Radio Company
59 1N748D 500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-1% tolerance. Jinan Gude Electronic Device
60 1N748D 3.9 V, 20 mA, zener diode Leshan Radio Company


Datasheets found :: 872
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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