| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK578 |
OUT LINE BQUIVALRN CIRCUIT |
TOSHIBA |
| 2 |
74LVCHR16245ALRG4 |
16-Bit Bus Transceiver With 3-State Outputs 48-SSOP -40 to 125 |
Texas Instruments |
| 3 |
ALR006 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 4 |
ALR015 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 5 |
ALR030 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 6 |
ALR060 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 7 |
ALR100 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 8 |
ALR200 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 9 |
ALR325 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 10 |
AMD-K6-166ALR |
Processor AMD-K6 family, operating voltage=3.1V�3.3V, 166MHz |
Advanced Micro Devices |
| 11 |
AMD-K6-200ALR |
Processor AMD-K6 family, operating voltage=3.1V�3.3V, 200MHz |
Advanced Micro Devices |
| 12 |
CEB4060ALR |
N-channel enhancement mode field effect transistor |
Chino-Excel Technology |
| 13 |
CEB4069ALR |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 14 |
CEP4060ALR |
N-channel enhancement mode field effect transistor |
Chino-Excel Technology |
| 15 |
CEP4069ALR |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 16 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 17 |
HM514260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 18 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 19 |
HM514400ALR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
| 20 |
HM514400ALR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 21 |
HM514400ALR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 22 |
HM514400ALRR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
| 23 |
HM514400ALRR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 24 |
HM514400ALRR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 25 |
HM514800ALRR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 26 |
HM514800ALRR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 27 |
HM51S4260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 28 |
HM51S4260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 29 |
HM51S4260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 30 |
HM51S4800ALRR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
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