No. |
Part Name |
Description |
Manufacturer |
61 |
HM628512ALRR-7 |
4M SRAM (512 KWORD X 8 BIT) |
Hitachi Semiconductor |
62 |
HM628512ALRR-7SL |
4M SRAM (512 KWORD X 8 BIT) |
Hitachi Semiconductor |
63 |
HM628512ALRRI |
524288-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
64 |
HM628512ALRRI-7 |
524288-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
65 |
HM628512ALRRI-8 |
524288-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
66 |
HM658512ALRR-10 |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
67 |
HM658512ALRR-10V |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
68 |
HM658512ALRR-7 |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
69 |
HM658512ALRR-7V |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
70 |
HM658512ALRR-8 |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
71 |
HM658512ALRR-8V |
4 M PSRAM (512-kword x 8-bit) 2 k Refresh |
Hitachi Semiconductor |
72 |
HY514400ALR |
1M x 4-bit CMOS DRAM |
etc |
73 |
HY62256ALR1 |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
74 |
HY62256ALR1-55 |
32Kx8bit CMOS SRAM, standby current=100uA, 55ns |
Hynix Semiconductor |
75 |
HY62256ALR1-70 |
32Kx8bit CMOS SRAM, standby current=100uA, 70ns |
Hynix Semiconductor |
76 |
HY62256ALR1-85 |
32Kx8bit CMOS SRAM, standby current=100uA, 85ns |
Hynix Semiconductor |
77 |
HY62256ALR2-I |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
78 |
HY62256ALR2-I-55 |
32Kx8bit CMOS SRAM, standby current=100uA, 55ns |
Hynix Semiconductor |
79 |
HY62256ALR2-I-70 |
32Kx8bit CMOS SRAM, standby current=100uA, 70ns |
Hynix Semiconductor |
80 |
HY62256ALR2-I-85 |
32Kx8bit CMOS SRAM, standby current=100uA, 85ns |
Hynix Semiconductor |
81 |
HY628400ALR2 |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
82 |
HY628400ALR2-E |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
83 |
HY628400ALR2-I |
512K x8 bit 5.0V Low Power CMOS slow SRAM |
Hynix Semiconductor |
84 |
KM684000ALR-5L |
55ns, 512Kx8 bit low low power CMOS static RAM |
Samsung Electronic |
85 |
KM684000ALR-7L |
70ns, 512Kx8 bit low low power CMOS static RAM |
Samsung Electronic |
86 |
KM684000ALRI-7L |
70ns, 512Kx8 bit low low power CMOS static RAM |
Samsung Electronic |
87 |
MG15C4MNI |
OUT LINE BQUIVALRN CIRCUIT |
TOSHIBA |
88 |
MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
89 |
MRF18030ALR3 |
RF Power Field Effect Transistors |
Motorola |
90 |
MRF373ALR1 |
470–860 MHz, 75 W, 32 V Lateral N–Channel Broadband RF Power MOSFET |
Freescale (Motorola) |
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