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Datasheets for ALR

Datasheets found :: 108
Page: | 1 | 2 | 3 | 4 |
No. Part Name Description Manufacturer
61 HM628512ALRR-7 4M SRAM (512 KWORD X 8 BIT) Hitachi Semiconductor
62 HM628512ALRR-7SL 4M SRAM (512 KWORD X 8 BIT) Hitachi Semiconductor
63 HM628512ALRRI 524288-word x 8-bit High Speed CMOS Static RAM Hitachi Semiconductor
64 HM628512ALRRI-7 524288-word x 8-bit High Speed CMOS Static RAM Hitachi Semiconductor
65 HM628512ALRRI-8 524288-word x 8-bit High Speed CMOS Static RAM Hitachi Semiconductor
66 HM658512ALRR-10 4 M PSRAM (512-kword x 8-bit) 2 k Refresh Hitachi Semiconductor
67 HM658512ALRR-10V 4 M PSRAM (512-kword x 8-bit) 2 k Refresh Hitachi Semiconductor
68 HM658512ALRR-7 4 M PSRAM (512-kword x 8-bit) 2 k Refresh Hitachi Semiconductor
69 HM658512ALRR-7V 4 M PSRAM (512-kword x 8-bit) 2 k Refresh Hitachi Semiconductor
70 HM658512ALRR-8 4 M PSRAM (512-kword x 8-bit) 2 k Refresh Hitachi Semiconductor
71 HM658512ALRR-8V 4 M PSRAM (512-kword x 8-bit) 2 k Refresh Hitachi Semiconductor
72 HY514400ALR 1M x 4-bit CMOS DRAM etc
73 HY62256ALR1 32Kx8bit CMOS SRAM Hynix Semiconductor
74 HY62256ALR1-55 32Kx8bit CMOS SRAM, standby current=100uA, 55ns Hynix Semiconductor
75 HY62256ALR1-70 32Kx8bit CMOS SRAM, standby current=100uA, 70ns Hynix Semiconductor
76 HY62256ALR1-85 32Kx8bit CMOS SRAM, standby current=100uA, 85ns Hynix Semiconductor
77 HY62256ALR2-I 32Kx8bit CMOS SRAM Hynix Semiconductor
78 HY62256ALR2-I-55 32Kx8bit CMOS SRAM, standby current=100uA, 55ns Hynix Semiconductor
79 HY62256ALR2-I-70 32Kx8bit CMOS SRAM, standby current=100uA, 70ns Hynix Semiconductor
80 HY62256ALR2-I-85 32Kx8bit CMOS SRAM, standby current=100uA, 85ns Hynix Semiconductor
81 HY628400ALR2 512K x8 bit 5.0V Low Power CMOS slow SRAM Hynix Semiconductor
82 HY628400ALR2-E 512K x8 bit 5.0V Low Power CMOS slow SRAM Hynix Semiconductor
83 HY628400ALR2-I 512K x8 bit 5.0V Low Power CMOS slow SRAM Hynix Semiconductor
84 KM684000ALR-5L 55ns, 512Kx8 bit low low power CMOS static RAM Samsung Electronic
85 KM684000ALR-7L 70ns, 512Kx8 bit low low power CMOS static RAM Samsung Electronic
86 KM684000ALRI-7L 70ns, 512Kx8 bit low low power CMOS static RAM Samsung Electronic
87 MG15C4MNI OUT LINE BQUIVALRN CIRCUIT TOSHIBA
88 MRF18030ALR3 GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET Freescale (Motorola)
89 MRF18030ALR3 RF Power Field Effect Transistors Motorola
90 MRF373ALR1 470–860 MHz, 75 W, 32 V Lateral N–Channel Broadband RF Power MOSFET Freescale (Motorola)


Datasheets found :: 108
Page: | 1 | 2 | 3 | 4 |



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