| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10BF20 |
200V 1A Ultra-Fast Discrete Diode in a SMB package |
International Rectifier |
| 2 |
10BF20TR |
200V 1A Ultra-Fast Discrete Diode in a SMB package |
International Rectifier |
| 3 |
30BF20 |
200V 3A Ultra-Fast Discrete Diode in a SMC package |
International Rectifier |
| 4 |
30BF20TR |
200V 3A Ultra-Fast Discrete Diode in a SMC package |
International Rectifier |
| 5 |
BF200 |
0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 15 - 40 hFE. |
Continental Device India Limited |
| 6 |
BF200 |
Silicon NPN high-frequency transistor, metal case |
IPRS Baneasa |
| 7 |
BF200 |
Silicon high frequency, low power NPN transistor |
IPRS Baneasa |
| 8 |
BF200 |
Si-PLANAR-npn |
IPRS Baneasa |
| 9 |
BF200 |
Silicon NPN Epitaxial Planar HF Transistor |
IPRS Baneasa |
| 10 |
BF200 |
Si-PLANAR-npn RF low power TRANSISTOR |
IPRS Baneasa |
| 11 |
BF200 |
High frequency transistor |
mble |
| 12 |
BF200 |
High frequency transistor |
mble |
| 13 |
BF200 |
NPN silicon, epitaxial, planar transistor |
Mikroelektronikai Vallalat |
| 14 |
BF200 |
Silicon N-P-N low power transistor |
Mullard |
| 15 |
BF200 |
V.H.F. Silicon Planar N-P-N Transistor |
Mullard |
| 16 |
BF200 |
NPN AGC-UHF, Amp Mixer Transistor |
National Semiconductor |
| 17 |
BF200 |
NPN silicon transistor, RF amplification |
SESCOSEM |
| 18 |
BF200 |
Tranzystor wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 19 |
BF200 |
Tranzystor krzemowy ma�ej mocy, wielkiej cz�stotliwo�ci |
Ultra CEMI |
| 20 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
| 21 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 22 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 23 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 24 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 25 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 26 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 27 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 28 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 29 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 30 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
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