No. |
Part Name |
Description |
Manufacturer |
31 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
32 |
DBF20 |
Diffused Junction Silicon Diode 2.0A Single-Phase Bridge Rectifier |
SANYO |
33 |
DBF20C |
Single-Phase Bridge Rectifying Diodes |
SANYO |
34 |
DBF20T |
2.0A Single-Phase Bridge Rectifier |
SANYO |
35 |
HDSP-0881-BF200 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
36 |
HDSP-0882-BF200 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
37 |
HDSP-0883-BF200 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
38 |
HDSP-0884-BF200 |
Glass/Ceramic Numeric and Hexadecimal Displays for Industrial Applications |
Agilent (Hewlett-Packard) |
39 |
IRFBF20 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
40 |
IRFBF20L |
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
41 |
IRFBF20S |
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
42 |
IRFBF20STRL |
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
43 |
IRFBF20STRR |
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
44 |
IRFIBF20G |
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
45 |
IRGBF20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A) |
International Rectifier |
46 |
IRGBF20F |
900V Discrete IGBT in a TO-220AB package |
International Rectifier |
47 |
MBF200 |
Solid State Fingerprint Sensor |
Fujitsu Microelectronics |
48 |
PBF203 |
THYRISTOR MODULE |
Nihon |
49 |
PBF206 |
THYRISTOR MODULE |
Nihon |
50 |
PBF208 |
THYRISTOR MODULE |
Nihon |
51 |
TCR2BF20 |
CMOS point regulator (single output) |
TOSHIBA |
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