No. |
Part Name |
Description |
Manufacturer |
1 |
2N4870 |
PN UNIJUNCTION TRANSISTORS SILICON UNIJUNCTION TRANSISTORS |
Boca Semiconductor Corporation |
2 |
2N4871 |
PN UNIJUNCTION TRANSISTORS SILICON UNIJUNCTION TRANSISTORS |
Boca Semiconductor Corporation |
3 |
2N5195 |
PNP SILICON TRANSISTOR |
ST Microelectronics |
4 |
2SA761 |
3Ampere PNP silicon power transistor |
MOSPEC Semiconductor |
5 |
2SJ136 |
Fast switching P-channel silicon power MOS FET. |
NEC |
6 |
2SJ137 |
Fast switching P-channel silicon power MOS FET. |
NEC |
7 |
2SJ139 |
Fast switching P-channel silicon power MOS FET. |
NEC |
8 |
2SJ141 |
Fast switching P-channel silicon power MOS FET. |
NEC |
9 |
2SJ143 |
Fast switching P-channel silicon power MOS FET. |
NEC |
10 |
2SK833 |
Fast switching N-channel silicon MOS field effect power transistor. |
NEC |
11 |
ADUC841 |
ADuC841/ADuC842/ADuC843: MicroConverter® Multichannel 12-Bit ADC with Embedded 62 kB Flash and Single-Cycle MCU Anomaly Data Sheet for Rev E Silicon (Rev A, 07/2004) |
Analog Devices |
12 |
ADUC842 |
ADuC841/ADuC842/ADuC843: MicroConverter® Multichannel 12-Bit ADC with Embedded 62 kB Flash and Single-Cycle MCU Anomaly Data Sheet for Rev E Silicon (Rev A, 07/2004) |
Analog Devices |
13 |
ADUC843 |
ADuC841/ADuC842/ADuC843: MicroConverter® Multichannel 12-Bit ADC with Embedded 62 kB Flash and Single-Cycle MCU Anomaly Data Sheet for Rev E Silicon (Rev A, 07/2004) |
Analog Devices |
14 |
BD135 |
NPN SILICON TRANSISTORS |
ST Microelectronics |
15 |
BD136 |
PNP SILICON TRANSISTORS |
ST Microelectronics |
16 |
BD138 |
PNP SILICON TRANSISTORS |
ST Microelectronics |
17 |
BD139 |
NPN SILICON TRANSISTORS |
ST Microelectronics |
18 |
BD140 |
PNP SILICON TRANSISTORS |
ST Microelectronics |
19 |
BD179 |
NPN SILICON TRANSISTOR |
ST Microelectronics |
20 |
BY298 |
400 V, 2 A fast silicon rectifier |
Honey Technology |
21 |
BY299 |
800 V, 2 A fast silicon rectifier |
Honey Technology |
22 |
KSA1010 |
-100 V, -15 A, PNP epitaxial silicon transistor |
Samsung Electronic |
23 |
KSA1220 |
-120 V, -1.2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
24 |
KSA1220A |
-120 V, -1.2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
25 |
KSA614 |
-80 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
26 |
KSA634 |
-40 V, -2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
27 |
KSA940 |
-150 V, -1.5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
28 |
KSB596 |
-80 V, -4 A, PNP epitaxial silicon transistor |
Samsung Electronic |
29 |
KSC1096 |
40 V, 2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
30 |
KSC1173 |
30 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
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