| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MPX5100 |
MPX5100 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 62 |
MPX53 |
MPX53 50 kPa Uncompensated Silicon Pressure Sensors |
Motorola |
| 63 |
MPX5500 |
MPX5500 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 64 |
MPX5700 |
MPX5700 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 65 |
MPX5999D |
MPX5999D Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 66 |
MPXAZ6115A |
Media Resis and Hi Temp Silicon Pressure Sensor |
Motorola |
| 67 |
MPXH6250A |
HITEMP ACCURACY INTEGRATED SILICON PRESSURE SENSOR |
Motorola |
| 68 |
MPXH6400A |
HITEMP ACCURACY INTEGRATED SILICON PRESSURE SENSOR |
Motorola |
| 69 |
MPXM2010 |
MPXM2010 10 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors |
Motorola |
| 70 |
MPXM2053 |
MPXM2053 50 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors |
Motorola |
| 71 |
MPXV4006G |
MPXV4006G Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 72 |
MPXV4115V |
MPXV4115V Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 73 |
MPXV5004G |
MPXV5004G Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 74 |
SS8550 |
-40 V, -1.5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 75 |
SS9011 |
50 V, 30 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 76 |
SS9012 |
-40 V, -500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 77 |
SS9013 |
40 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 78 |
SS9014 |
50 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 79 |
SS9015 |
-50 V, -100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
| 80 |
SS9016 |
30 V, 25 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 81 |
SS9018 |
30 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 82 |
UPA1520H |
Fast switching N-channel silicon power MOS FET array. |
NEC |
| 83 |
UPA1523H |
Fast switching P-channel silicon power MOS FET array. |
NEC |
| 84 |
UPA1552H |
Fast switching N-channel silicon power MOS FET array. |
NEC |
| 85 |
UPA1556H |
Fast switching N-channel silicon power MOS FET array. |
NEC |
| 86 |
UPA1570H |
Fast switching N-channel silicon power MOS FET array. |
NEC |
| 87 |
UPA1572H |
Fast switching N-channel silicon power MOS FET array. |
NEC |
| | | |
