| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 3 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 4 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 5 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 6 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 7 |
BCR08PN |
Digital Transistors - SOT363 package |
Infineon |
| 8 |
BCR08PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
| 9 |
CCCR05CXXX |
Multiayer Ceramic Leaded Capacitors |
AVX Corporation |
| 10 |
CCR05CX1R0 |
Multiayer Ceramic Leaded Capacitors |
AVX Corporation |
| 11 |
CCR06CG183JR |
Multiayer Ceramic Leaded Capacitors |
AVX Corporation |
| 12 |
CR02 |
LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 13 |
CR02 |
Lead-Mount/ Phase Control SCR 0.3 Amperes/400 Volts |
Powerex Power Semiconductors |
| 14 |
CR022 |
N-Channel junction Field-Effect current-limitting transistor |
CCSIT-CE |
| 15 |
CR022 |
Diode Current Reg. 100V 0.242mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 16 |
CR024 |
Diode Current Reg. 100V 0.264mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 17 |
CR027 |
Diode Current Reg. 100V 0.297mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 18 |
CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 19 |
CR02AM |
Lead-Mount, Phase Control SCR 0.3 Amperes/400 Volts |
Powerex Power Semiconductors |
| 20 |
CR02AM-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 21 |
CR02AM-6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 22 |
CR02AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 23 |
CR02AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 24 |
CR030 |
Diode Current Reg. 100V 0.33mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 25 |
CR0300SA |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 26 |
CR0300SB |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 27 |
CR0300SC |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 28 |
CR033 |
Diode Current Reg. 100V 0.363mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 29 |
CR039 |
Diode Current Reg. 100V 0.429mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 30 |
CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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