| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CR03AM |
Lead-Mount, Phase Control SCR 0.3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 32 |
CR03AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 33 |
CR03AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 34 |
CR03AM400-12 |
Lead-Mount, Phase Control SCR 0.3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 35 |
CR03AM400-8 |
Lead-Mount, Phase Control SCR 0.3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 36 |
CR03AM600-12 |
Lead-Mount, Phase Control SCR 0.3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 37 |
CR03AM600-8 |
Lead-Mount, Phase Control SCR 0.3 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 38 |
CR04 |
LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 39 |
CR043 |
Diode Current Reg. 100V 0.473mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 40 |
CR047 |
Diode Current Reg. 100V 0.517mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 41 |
CR04AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 42 |
CR04AM |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 43 |
CR04AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 44 |
CR04AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 45 |
CR04AM400-12 |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 46 |
CR04AM400-8 |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 47 |
CR04AM600-12 |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 48 |
CR04AM600-8 |
Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 49 |
CR056 |
Diode Current Reg. 100V 0.616mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 50 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 51 |
CR05AS-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 52 |
CR05AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 53 |
CR0602AA |
Bi-directional Glass passivated junction |
Littelfuse |
| 54 |
CR0602AB |
Bi-directional Glass passivated junction |
Littelfuse |
| 55 |
CR0602AC |
Bi-directional Glass passivated junction |
Littelfuse |
| 56 |
CR062 |
N-Channel junction Field-Effect current-limitting transistor |
CCSIT-CE |
| 57 |
CR062 |
Diode Current Reg. 100V 0.682mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 58 |
CR0640SA |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 59 |
CR0640SB |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 60 |
CR0640SC |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
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