No. |
Part Name |
Description |
Manufacturer |
1 |
2SCR341Q |
NPN 100mA 400V Middle Power Transistor |
ROHM |
2 |
2SCR341QTR |
NPN 100mA 400V Middle Power Transistor |
ROHM |
3 |
2SCR346P |
NPN 100mA 400V Middle Power Transistor |
ROHM |
4 |
2SCR346PT100 |
NPN 100mA 400V Middle Power Transistor |
ROHM |
5 |
2SCR372P |
NPN Driver Transistor |
ROHM |
6 |
2SCR372P5 |
NPN 120V 700mA Medium Power Driver |
ROHM |
7 |
2SCR372P5T100 |
NPN 120V 700mA Medium Power Driver |
ROHM |
8 |
2SCR372PFRA |
NPN Driver Transistor (Corresponds to AEC-Q101) |
ROHM |
9 |
2SCR372PFRAT100 |
NPN Driver Transistor (Corresponds to AEC-Q101) |
ROHM |
10 |
2SCR372PT100 |
NPN Driver Transistor |
ROHM |
11 |
2SCR375P |
NPN Driver Transistor |
ROHM |
12 |
2SCR375P5 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
13 |
2SCR375P5T100 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
14 |
2SCR375PT100 |
NPN Driver Transistor |
ROHM |
15 |
ACR300SG33 |
Fast Turn-on Asymmetric Thyristor |
Dynex Semiconductor |
16 |
BCR3 |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
17 |
BCR30 |
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
18 |
BCR30AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
19 |
BCR30AM |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
20 |
BCR30AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
21 |
BCR30AM-12 |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
22 |
BCR30AM-12L |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
23 |
BCR30AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
24 |
BCR30AM-8 |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
25 |
BCR30AM-8L |
Triac 30 Ampere/400-600 Volts |
Powerex Power Semiconductors |
26 |
BCR30GM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
27 |
BCR35 |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) |
Siemens |
28 |
BCR35PN |
Digital Transistors - SOT363 package |
Infineon |
29 |
BCR35PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
30 |
BCR39 |
NPN/PNP Silicon Digital Transistor Array |
Infineon |
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