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Datasheets for CR3

Datasheets found :: 1383
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 CR3500SB The CR range of protectors are based on the proven technology of the T10 thyristor product Littelfuse
92 CR3500SC The CR range of protectors are based on the proven technology of the T10 thyristor product Littelfuse
93 CR360 Diode Current Reg. 135V 3.96mA 2-Pin TO-206AA New Jersey Semiconductor
94 CR360 Current Regulator Diode Vishay
95 CR3602AA Bi-directional Glass passivated junction Littelfuse
96 CR3602AB Bi-directional Glass passivated junction Littelfuse
97 CR3602AC Bi-directional Glass passivated junction Littelfuse
98 CR3710 Integrated ATAPI DVD Drive Manager Cirrus Logic
99 CR3710 Integrated ATAPI DVD Drive Manager Cirrus Logic
100 CR390 Diode Current Reg. 135V 4.29mA 2-Pin TO-206AA New Jersey Semiconductor
101 CR390 Current Regulator Diode Vishay
102 CR3AMZ HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
103 CR3EM MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
104 CR3F-010 Leaded Rectifier Fast Recovery Central Semiconductor
105 CR3F-020 Leaded Rectifier Fast Recovery Central Semiconductor
106 CR3F-040 Leaded Rectifier Fast Recovery Central Semiconductor
107 CR3F-060 Leaded Rectifier Fast Recovery Central Semiconductor
108 CR3F-080 Leaded Rectifier Fast Recovery Central Semiconductor
109 CR3F-100 Leaded Rectifier Fast Recovery Central Semiconductor
110 CR3JM HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
111 CR3JM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
112 CR3KM-12 Thyristor (Low Power Use) Renesas
113 CR3PM MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
114 CR3PM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
115 CR3PM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
116 CR3U-010 Leaded Rectifier Ultra Fast Central Semiconductor
117 CR3U-020 Leaded Rectifier Ultra Fast Central Semiconductor
118 CR3U-040 Leaded Rectifier Ultra Fast Central Semiconductor
119 CR3U-060 Leaded Rectifier Ultra Fast Central Semiconductor
120 CR3U-080 Leaded Rectifier Ultra Fast Central Semiconductor


Datasheets found :: 1383
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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