| No. |
Part Name |
Description |
Manufacturer |
| 91 |
CR3424R |
Video Driver Hybrid Amplifier 115MHz 2.7ns |
Motorola |
| 92 |
CR3425A |
Video Driver Hybrid Amplifier 115MHz 2.7ns |
Motorola |
| 93 |
CR3428 |
Video Driver Hybrid Amplifier 115MHz 2.7ns |
Motorola |
| 94 |
CR3500SA |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 95 |
CR3500SB |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 96 |
CR3500SC |
The CR range of protectors are based on the proven technology of the T10 thyristor product |
Littelfuse |
| 97 |
CR360 |
Diode Current Reg. 135V 3.96mA 2-Pin TO-206AA |
New Jersey Semiconductor |
| 98 |
CR360 |
Current Regulator Diode |
Vishay |
| 99 |
CR3602AA |
Bi-directional Glass passivated junction |
Littelfuse |
| 100 |
CR3602AB |
Bi-directional Glass passivated junction |
Littelfuse |
| 101 |
CR3602AC |
Bi-directional Glass passivated junction |
Littelfuse |
| 102 |
CR3710 |
Integrated ATAPI DVD Drive Manager |
Cirrus Logic |
| 103 |
CR3710 |
Integrated ATAPI DVD Drive Manager |
Cirrus Logic |
| 104 |
CR390 |
Diode Current Reg. 135V 4.29mA 2-Pin TO-206AA |
New Jersey Semiconductor |
| 105 |
CR390 |
Current Regulator Diode |
Vishay |
| 106 |
CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 107 |
CR3EM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 108 |
CR3F-010 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 109 |
CR3F-020 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 110 |
CR3F-040 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 111 |
CR3F-060 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 112 |
CR3F-080 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 113 |
CR3F-100 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 114 |
CR3JM |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 115 |
CR3JM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 116 |
CR3KM-12 |
Thyristor (Low Power Use) |
Renesas |
| 117 |
CR3PM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 118 |
CR3PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 119 |
CR3PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 120 |
CR3U-010 |
Leaded Rectifier Ultra Fast |
Central Semiconductor |
| | | |
