| No. |
Part Name |
Description |
Manufacturer |
| 1 |
173D |
Solid Tantalum Capacitors, Solid Electrolyte Tantalex, Axial Leaded, Molded Case, Standard Range |
Vishay |
| 2 |
593D |
Solid Tantalum Chip Capacitors, Tantamount® Commercial, Low ESR, Designed for Switch Mode Power Supplies & Converters, Molded Case Available in Three Case Codes, Automatic Pick & Place Compatible, Meets EIA 53 |
Vishay |
| 3 |
893D |
Solid Tantalum Chip Capacitors, TANTAMOUNT®, Built-In-Fuse Miniature, Molded Case in Three Case Codes, Fusible, Meets EIA 535BAAC and IEC Specification QC300801/US0001, Automatic Pick and Place Compatible |
Vishay |
| 4 |
BFC505 |
NPN wideband cascode transistor |
Philips |
| 5 |
BFC520 |
NPN wideband cascode transistor |
Philips |
| 6 |
CWR11 |
Solid Tantalum Chip Capacitors, TANTAMOUNT® Solid-Electrolyte, Military, MIL-C-55365/8 Qualified, Molded Case Available in Four Case Codes, Automatic Pick and Place Compatible, Solder Plate Terminations |
Vishay |
| 7 |
E989 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 8 |
E989-02 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 9 |
E989-03 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 10 |
E989-04 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 11 |
E989-05 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 12 |
E989-09 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 13 |
E989-10 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 14 |
E989-15 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 15 |
E989-26 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 16 |
E989-28 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 17 |
E989-39 |
Magnetic Shield Cases |
Hamamatsu Corporation |
| 18 |
KM44C4003C |
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode |
Samsung Electronic |
| 19 |
KM44C4003CK-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 20 |
KM44C4003CK-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 21 |
KM44C4003CKL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 22 |
KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 23 |
KM44C4003CS-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 24 |
KM44C4003CS-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 25 |
KM44C4003CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 26 |
KM44C4003CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 27 |
KM44C4005C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
Samsung Electronic |
| 28 |
KM44C4005CK-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 29 |
KM44C4005CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 30 |
KM44C4005CKL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
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