| No. |
Part Name |
Description |
Manufacturer |
| 31 |
KM44C4005CKL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 32 |
KM44C4005CS-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 33 |
KM44C4005CS-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 34 |
KM44C4005CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 35 |
KM44C4005CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 36 |
KM44C4103C |
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode |
Samsung Electronic |
| 37 |
KM44C4103CK-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 38 |
KM44C4103CK-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 39 |
KM44C4103CKL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 40 |
KM44C4103CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 41 |
KM44C4103CS-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 42 |
KM44C4103CS-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 43 |
KM44C4103CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 44 |
KM44C4103CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 45 |
KM44C4105C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
Samsung Electronic |
| 46 |
KM44C4105CK-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 47 |
KM44C4105CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 48 |
KM44C4105CKL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 49 |
KM44C4105CKL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 50 |
KM44C4105CS-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 51 |
KM44C4105CS-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 52 |
KM44C4105CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 53 |
KM44C4105CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 54 |
LAG665F |
Radio and cassette recorder circuit. Operating voltage Vop = 2V to 5V. Supply voltage Vcc: -0.3V to +7.5V. Supply current Icc: 18mA(typ), 25mA(max). |
Contek Microelectronics |
| 55 |
LAG668 |
Radio and cassette recorder circuit. Operating voltage Vop = 2V to 5V. Supply voltage Vcc: -0.3V to +7.5V. Supply current Icc: 18mA(typ), 25mA(max). |
Contek Microelectronics |
| 56 |
MDP14 |
Dual Inline Package, Molded DIP, 01, 03, 05 Schematics, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Uniform Performance Characteristics, Available in Tube Pack |
Vishay |
| 57 |
MDP16 |
Dual Inline Package, Molded DIP, 01, 03, 05 Schematics, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Uniform Performance Characteristics, Available in Tube Pack |
Vishay |
| 58 |
MDP16-45 |
Dual Inline Package, Molded DIP, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Available in Tube Pack, Reduces Assembly Costs |
Vishay |
| 59 |
MDP16-46 |
Dual Inline Package, Molded DIP, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Available in Tube Pack, Reduces Assembly Costs |
Vishay |
| 60 |
MDRC |
Dual Inline Package, Molded DIP, 16 Pin, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Reduces Assembly Costs |
Vishay |
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