No. |
Part Name |
Description |
Manufacturer |
1 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
2 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
3 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
4 |
2N111 |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode |
Fairchild Semiconductor |
5 |
2N2195 |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
6 |
2N2195A |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
7 |
2N2195B |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
8 |
2N3011 |
High-Speed NPN Silicon saturated Switching Transistor |
ITT Semiconductors |
9 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
10 |
2N3375 |
RF CLASS C wide band NPN transistor |
SGS Thomson Microelectronics |
11 |
2N3632 |
RF CLASS C wide band NPN transistor |
SGS Thomson Microelectronics |
12 |
2N3724 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
13 |
2N3725 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
14 |
2N3733 |
RF CLASS C wide band NPN transistor |
SGS Thomson Microelectronics |
15 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
16 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
17 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
18 |
2N3996 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
19 |
2N3997 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
20 |
2N4013 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
21 |
2N4014 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
22 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
23 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
24 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
25 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
26 |
2N4420 |
High-Speed NPN silicon saturated switching transistor |
ITT Semiconductors |
27 |
2N4421 |
High-Speed NPN silicon saturated switching transistor |
ITT Semiconductors |
28 |
2N4422 |
High-Speed NPN silicon saturated switching transistor |
ITT Semiconductors |
29 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
30 |
2N5002 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
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