No. |
Part Name |
Description |
Manufacturer |
31 |
2N5004 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
32 |
2N5006 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
33 |
2N5008 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
34 |
2N5152 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
35 |
2N5154 |
100 V, 5 A high speed NPN transistor |
Solid State Devices Inc |
36 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
37 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
38 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
39 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
40 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
41 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
42 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
43 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
44 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
45 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
46 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
47 |
2N5330 |
150 V, 30 A high speed NPN transistor |
Solid State Devices Inc |
48 |
2N5334 |
3 Apere High-speed NPN silicon 6W power transistor |
Motorola |
49 |
2N5335 |
3 Apere High-speed NPN silicon 6W power transistor |
Motorola |
50 |
2N5659 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
51 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
52 |
2N6989U |
Surface mount quad NPN transistor |
Optek Technology |
53 |
2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
54 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
55 |
2N7288D |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
56 |
2N7288H |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
57 |
2N7288R |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
58 |
2SC2356 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT |
Fujitsu Microelectronics |
59 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
60 |
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 |
Isahaya Electronics Corporation |
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