No. |
Part Name |
Description |
Manufacturer |
1 |
106 |
Wire Bondable Chip Inductors |
American Precision |
2 |
1AS027 |
Silicon rectifier with avalanche character 1.5A 800V, approved under CV7645 for MIL applications |
Texas Instruments |
3 |
1AS029 |
Silicon rectifier with avalanche character 1.5A 1000V, approved under CV7645 for MIL applications |
Texas Instruments |
4 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
5 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
6 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
7 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
8 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
9 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
10 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
11 |
1N5518 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
12 |
1N5518B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
13 |
1N5518B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
14 |
1N5519B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
15 |
1N5519B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
16 |
1N5520B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
17 |
1N5520B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
18 |
1N5521B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
19 |
1N5521B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
20 |
1N5522B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
21 |
1N5522B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
22 |
1N5523B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
23 |
1N5523B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
24 |
1N5524B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
25 |
1N5524B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
26 |
1N5525B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
27 |
1N5525B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
28 |
1N5526B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
29 |
1N5526B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
30 |
1N5527B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
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