No. |
Part Name |
Description |
Manufacturer |
61 |
1N5542B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
62 |
1N5543B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
63 |
1N5543B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
64 |
1N5544B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
65 |
1N5544B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
66 |
1N5545B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
67 |
1N5545B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
68 |
1N5546B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
69 |
1N5546B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
70 |
1N941 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.088V |
Motorola |
71 |
1N941A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.181V |
Motorola |
72 |
1N941B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.239V |
Motorola |
73 |
1N942 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.044V |
Motorola |
74 |
1N942A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.090V |
Motorola |
75 |
1N942B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.120V |
Motorola |
76 |
1N943 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
77 |
1N943A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.036V |
Motorola |
78 |
1N943B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V |
Motorola |
79 |
1N944 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
80 |
1N944A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
81 |
1N944B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V |
Motorola |
82 |
1N945 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V |
Motorola |
83 |
1N945A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
84 |
1N945B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V |
Motorola |
85 |
34C60 |
PARALLEL PORT INTERFACE CHIP PERIPHERAL SIDE |
SMSC Corporation |
86 |
4N22 |
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
Micropac Industries |
87 |
4N22A |
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
Micropac Industries |
88 |
4N23 |
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
Micropac Industries |
89 |
4N23A |
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
Micropac Industries |
90 |
4N24 |
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
Micropac Industries |
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