No. |
Part Name |
Description |
Manufacturer |
1 |
12136AF |
Dolby B-Type Noise Reduction System |
Hitachi Semiconductor |
2 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
3 |
145 |
PRODUCT/PROCESS CHANGE NOTIFICATION |
ST Microelectronics |
4 |
19MT050XF |
500V Single N-Channel HEXFET Power MOSFET in a MTP package |
International Rectifier |
5 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
6 |
2N1408 |
PNP germanium transistor for high voltage neon driver, solenoid and relay driver circuits |
Motorola |
7 |
2N1487 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
8 |
2N1488 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
9 |
2N1489 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
10 |
2N1490 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
11 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
12 |
2N1613 |
General purpose NPN transistor |
FERRANTI |
13 |
2N1613 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
14 |
2N1613A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
15 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
16 |
2N1711 |
General purpose NPN transistor |
FERRANTI |
17 |
2N1711 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
18 |
2N1711A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
19 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
20 |
2N1893 |
General purpose NPN transistor |
FERRANTI |
21 |
2N2102 |
General purpose NPN transistor |
FERRANTI |
22 |
2N2217 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
23 |
2N2217 |
Silicon General Purpose NPN Transistor |
ITT Semiconductors |
24 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
25 |
2N2218 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
26 |
2N2218 |
Silicon General Purpose NPN Transistor |
ITT Semiconductors |
27 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
28 |
2N2218A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
29 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
30 |
2N2219 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
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