| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
| 32 |
2N3019 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 50 hFE. |
Continental Device India Limited |
| 33 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
| 34 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 35 |
2N3053 |
General purpose NPN transistor |
FERRANTI |
| 36 |
2N3053A |
7.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.700A Ic, 25 hFE. |
Continental Device India Limited |
| 37 |
2N3055 |
Power 15A 60V Discrete NPN |
ON Semiconductor |
| 38 |
2N3055A |
Power 15A 60V Discrete NPN |
ON Semiconductor |
| 39 |
2N3055H |
15 Ampere NPN silicon power transistor 60V 115W |
Motorola |
| 40 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
| 41 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 42 |
2N3439 |
HIGH VOLTAGE NPN TRANSISTORS |
SemeLAB |
| 43 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 44 |
2N3440 |
HIGH VOLTAGE NPN TRANSISTORS |
SemeLAB |
| 45 |
2N3442 |
Power 10A 140V Discrete NPN |
ON Semiconductor |
| 46 |
2N3478 |
0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. |
Continental Device India Limited |
| 47 |
2N3700 |
0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 48 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
| 49 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
| 50 |
2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE |
Continental Device India Limited |
| 51 |
2N3713 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 52 |
2N3714 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 53 |
2N3715 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 54 |
2N3716 |
100V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 55 |
2N3738 |
High-voltage NPN silicon power transistor |
Motorola |
| 56 |
2N3739 |
High-voltage NPN silicon power transistor |
Motorola |
| 57 |
2N3771 |
Power 30A 40V Discrete NPN |
ON Semiconductor |
| 58 |
2N3771 |
Power 30A 40V Discrete NPN |
ON Semiconductor |
| 59 |
2N3772 |
Power 20A 60V Discrete NPN |
ON Semiconductor |
| 60 |
2N3773 |
Power 16A 140V Discrete NPN |
ON Semiconductor |
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