| No. |
Part Name |
Description |
Manufacturer |
| 1 |
150PFT200 |
V(rrm/drm): 2000V; 800A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 2 |
150PFT250 |
V(rrm/drm): 2500V; 800A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 3 |
160PFT100 |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 4 |
160PFT100A |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 5 |
160PFT120 |
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 6 |
160PFT120A |
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 7 |
160PFT140 |
V(rrm/drm): 1400V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 8 |
160PFT160 |
V(rrm/drm): 1600V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 9 |
1N4148 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 10 |
1N4150 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 11 |
1N4151 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 12 |
1N4154 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 13 |
1N4448 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 14 |
1N4454 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 15 |
1N914 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 16 |
2N2095 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 17 |
2N2098 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 18 |
2N2962 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 19 |
2N2963 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 20 |
2N2964 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 21 |
2N2965 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 22 |
2N5179 |
NPN silicon RF high frequency transistor 4.5dB - 200MHz |
Motorola |
| 23 |
2SA1125 |
Si PNP epitaxial planar. AF high voltage amplifier. |
Panasonic |
| 24 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
| 25 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 26 |
2SC2995 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications |
TOSHIBA |
| 27 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
| 28 |
2SK2723(JM) |
Nch power MOSFET MP-45F high-speed switching |
NEC |
| 29 |
2SK3053(JM) |
Nch power MOS FET MP-45F high-current switching |
NEC |
| 30 |
2SK3058-Z |
Nch power MOS FET MP-45F high-speed switching |
NEC |
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