| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AGB3307 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 62 |
AN1059 |
DESIGN EQUATIONS OF HIGH-POWER-FACTOR FLYBACK CONVERTERS BASED ON THE L6561 |
SGS Thomson Microelectronics |
| 63 |
APPLICATION NOTE 1023 |
Mounting techniques for RF hermetic packages |
Motorola |
| 64 |
APPLICATION-NOTE |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 65 |
APT10043 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 66 |
APT10M07 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 67 |
APT10M25 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 68 |
APT1201R6 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 69 |
APT20M22 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 70 |
APT30M85 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 71 |
APT5014 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 72 |
APT5015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 73 |
APT5017 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 74 |
APT5020 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 75 |
APT5027 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
Advanced Power Technology |
| 76 |
APT50M50 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 77 |
APT50M80 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 78 |
APT6015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 79 |
APT6030 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 80 |
APT8015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 81 |
APT8018 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 82 |
APT8030 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 83 |
APT8065 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 84 |
APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 85 |
AT91SAM7A3 |
The AT91SAM7A3 features a 54 MIPS ARM7TDMI processor with 256K bytes of high-speed Flash, 32K bytes of SRAM and a rich peripheral ... |
Atmel |
| 86 |
BB641 |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance) |
Siemens |
| 87 |
BD283 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| 88 |
BD284 |
Silicon EPIBASE PNP Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| 89 |
BD285 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| 90 |
BD286 |
Silicon EPIBASE PNP Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| | | |
