Datasheets for F660

Datasheets found :: 50 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
1	ADRF6601	750 MHz TO 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO	Analog Devices
2	ADRF6602	1000 MHz to 3100 MHz Rx Mixer with Integrated Fractional-N PLL and VCO	Analog Devices
3	ADRF6603	1100 MHz to 3200 MHz Rx Mixer with Integrated Fractional-N PLL and VCO	Analog Devices
4	ADRF6604	1200 MHz TO 3600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO	Analog Devices
5	APTGF660U60D4	Single Switch - IGBT	Advanced Power Technology
6	BF660	PNP Silicon RF transistor	Infineon
7	BF660	PNP Silicon RF Transistor (For VHF oscillator applications)	Siemens
8	BF660W	PNP Silicon RF transistor	Infineon
9	BF660W	PNP Silicon RF Transistor (For VHF oscillator applications)	Siemens
10	IRAC5001-HS100A	+12V, 100A continuous current active OR-ing design kit featuring IR5001S and IRF6609	International Rectifier
11	IRDC2085S-DF	DC Bus Converter using IRF6603 secondary DirectFETs	International Rectifier
12	IRDC2086S-DF	Full bridge DC Bus Converter using IRF7493 & IRF6603 FETs	International Rectifier
13	IRF6601	20V Single N-Channel HEXFET Power MOSFET in a DirectFET package	International Rectifier
14	IRF6602	20V Single N-Channel HEXFET Power MOSFET in a DirectFET package	International Rectifier
15	IRF6602TR1	HEXFET Power MOSFET	International Rectifier
16	IRF6603	30V Single N-Channel HEXFET Power MOSFET in a DirectFET package	International Rectifier
17	IRF6604	30V Single N-Channel HEXFET Power MOSFET in a DirectFET package	International Rectifier
18	IRF6607	30V Single N-Channel HEXFET Power MOSFET in a DirectFET package	International Rectifier
19	IRF6607TR1	Power MOSFET	International Rectifier
20	IRF6608	30V Single N-Channel HEXFET Power MOSFET in a DirectFET package	International Rectifier
21	IRF6609	20V Single N-Channel HEXFET Power MOSFET in a DirectFET package	International Rectifier
22	IRF6609TR1	20V Single N-Channel HEXFET Power MOSFET in a DirectFET package	International Rectifier
23	IRF6609TR1PBF	A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.	International Rectifier
24	IRF6609TRPBF	A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.	International Rectifier
25	K4F660411D, K4F640411D	16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet	Samsung Electronic
26	K4F660412D	16M x 4bit CMOS Dynamic RAM with Fast Page Mode	Samsung Electronic
27	K4F660412D, K4F640412D	16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet	Samsung Electronic
28	K4F660412D, K4F640412D	16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet	Samsung Electronic
29	K4F660412D-JC_L	16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle.	Samsung Electronic
30	K4F660412D-TC_L	16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle.	Samsung Electronic

Datasheets found :: 50 Page: | 1 | 2 |