No. |
Part Name |
Description |
Manufacturer |
1 |
ADRF6601 |
750 MHz TO 1160 MHz Rx Mixer with Integrated Fractional-N PLL and VCO |
Analog Devices |
2 |
ADRF6602 |
1000 MHz to 3100 MHz Rx Mixer with Integrated Fractional-N PLL and VCO |
Analog Devices |
3 |
ADRF6603 |
1100 MHz to 3200 MHz Rx Mixer with Integrated Fractional-N PLL and VCO |
Analog Devices |
4 |
ADRF6604 |
1200 MHz TO 3600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO |
Analog Devices |
5 |
APTGF660U60D4 |
Single Switch - IGBT |
Advanced Power Technology |
6 |
BF660 |
PNP Silicon RF transistor |
Infineon |
7 |
BF660 |
PNP Silicon RF Transistor (For VHF oscillator applications) |
Siemens |
8 |
BF660W |
PNP Silicon RF transistor |
Infineon |
9 |
BF660W |
PNP Silicon RF Transistor (For VHF oscillator applications) |
Siemens |
10 |
IRAC5001-HS100A |
+12V, 100A continuous current active OR-ing design kit featuring IR5001S and IRF6609 |
International Rectifier |
11 |
IRDC2085S-DF |
DC Bus Converter using IRF6603 secondary DirectFETs |
International Rectifier |
12 |
IRDC2086S-DF |
Full bridge DC Bus Converter using IRF7493 & IRF6603 FETs |
International Rectifier |
13 |
IRF6601 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
14 |
IRF6602 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
15 |
IRF6602TR1 |
HEXFET Power MOSFET |
International Rectifier |
16 |
IRF6603 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
17 |
IRF6604 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
18 |
IRF6607 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
19 |
IRF6607TR1 |
Power MOSFET |
International Rectifier |
20 |
IRF6608 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
21 |
IRF6609 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
22 |
IRF6609TR1 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
23 |
IRF6609TR1PBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
24 |
IRF6609TRPBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
25 |
K4F660411D, K4F640411D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
26 |
K4F660412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
27 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
28 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
29 |
K4F660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
30 |
K4F660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
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