No. |
Part Name |
Description |
Manufacturer |
31 |
K4F660412E, K4F640412E |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
32 |
K4F660412E, K4F640412E |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
33 |
K4F660811B |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
34 |
K4F660811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
35 |
K4F660811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
36 |
K4F660811B-JC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
37 |
K4F660811B-TC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
38 |
K4F660811B-TC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
39 |
K4F660811B-TC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
40 |
K4F660811D, K4F640811D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
41 |
K4F660812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
42 |
K4F660812D, K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
43 |
K4F660812D, K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
44 |
K4F660812D-JC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
45 |
K4F660812D-TC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
46 |
K4F660812E, K4F640812E |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
47 |
K4F660812E, K4F640812E |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
48 |
MOSFETIRF6602 |
DirectFET�� Power MOSFET(Vdss=20V) |
International Rectifier |
49 |
MRF660 |
NPN Silicon RF Power Transistor 7W - 470MHz |
Motorola |
50 |
PB-IRF6609 |
Leaded A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
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