| No. |
Part Name |
Description |
Manufacturer |
| 1 |
01BZA8 |
DIODES (DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 2 |
01BZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
| 3 |
01ZA8 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 4 |
01ZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
| 5 |
01ZAB8.2 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 6 |
2N1185 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 7 |
2N1186 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 8 |
2N1187 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 9 |
2N1188 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 10 |
2N1189 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 11 |
2N1190 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 12 |
2N1191 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 13 |
2N1192 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 14 |
2N1193 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 15 |
2N1194 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 16 |
2N1711 |
Silicon NPN planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 17 |
2N2152 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
| 18 |
2N2153 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
| 19 |
2N2154 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
| 20 |
2N2156 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
| 21 |
2N2157 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
| 22 |
2N2158 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
| 23 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 24 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 25 |
2N2604 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
| 26 |
2N2605 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
| 27 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 28 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 29 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 30 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| | | |
