No. |
Part Name |
Description |
Manufacturer |
121 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
122 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
123 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
124 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
125 |
2SD1383KT146B |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
126 |
2SD1641 |
SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HIGH DC CURRNT GAIN,HIGH POWER AMPLIFIER TV POWER SOURCE OUTPUT |
Panasonic |
127 |
2SD1834T100 |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
128 |
2SD1944 |
High-current gain Power Transistor (-60V/ -3A) |
ROHM |
129 |
2SD2114S |
20V,0.5A high-current gain medium power transistor |
ROHM |
130 |
2SD2142KT146 |
NPN High gain amplifier Transistor (Darlington) |
ROHM |
131 |
2SD2144 |
High-current Gain MediumPower Transistor (20V/ 0.5A) |
ROHM |
132 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
133 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
134 |
3606 |
Digitally Controlled Programmable gain instrumentation amplifier |
Burr Brown |
135 |
3606 |
Digitally-Controlled Programmable Gain Instrumentation Amplifier |
Texas Instruments |
136 |
3606A |
Digitally Controlled Programmable gain instrumentation amplifier |
Burr Brown |
137 |
3606B |
Digitally Controlled Programmable gain instrumentation amplifier |
Burr Brown |
138 |
3606BG |
Digitally-Controlled Programmable Gain Instrumentation Amplifier |
Texas Instruments |
139 |
3627 |
High Accuracy Unity-Gain Differential Amplifier |
Burr Brown |
140 |
3627AM |
High Accuracy Unity-Gain Differential Amplifier |
Burr Brown |
141 |
3627BM |
High Accuracy Unity-Gain Differential Amplifier |
Burr Brown |
142 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
143 |
3SK202 |
Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification |
Panasonic |
144 |
4N32 |
Optocoupler, Photodarlington Output, High Gain, With Base Connection |
Vishay |
145 |
4N33 |
Optocoupler, Photodarlington Output, High Gain, With Base Connection |
Vishay |
146 |
4N45 |
High Gain Darlington Output Optocouplers |
Agilent (Hewlett-Packard) |
147 |
4N45-300 |
High gain darlington output optocoupler |
Agilent (Hewlett-Packard) |
148 |
4N45-500 |
High gain darlington output optocoupler |
Agilent (Hewlett-Packard) |
149 |
4N45300 |
High Gain Darlington Output Optocouplers |
Agilent (Hewlett-Packard) |
150 |
4N45500 |
High Gain Darlington Output Optocouplers |
Agilent (Hewlett-Packard) |
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