| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3113 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 2 |
1N3114 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 3 |
1N3115 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 4 |
1N3116 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 5 |
1N3117 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 6 |
1N3118 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 7 |
1N3119 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 8 |
1N3120 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 9 |
1N3138 |
Gallium Arsenide Tunnel Diode |
Motorola |
| 10 |
2SK649 |
Gallium Arsenide Devices |
Panasonic |
| 11 |
2SK653 |
Gallium Arsenide Devices |
Panasonic |
| 12 |
2SK690 |
Gallium Arsenide Devices |
Panasonic |
| 13 |
3SK0183 |
Gallium Arsenide Devices |
Panasonic |
| 14 |
3SK0184 |
Gallium Arsenide Devices |
Panasonic |
| 15 |
3SK0241 |
Gallium Arsenide Devices |
Panasonic |
| 16 |
3SK0272 |
Gallium Arsenide Devices |
Panasonic |
| 17 |
3SK0273 |
Gallium Arsenide Devices |
Panasonic |
| 18 |
AF-8110 |
0.5-6 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
| 19 |
AML056P4511 |
Gallium Nitride (GaN) |
Microsemi |
| 20 |
AML1416P4511 |
Gallium Nitride (GaN) |
Microsemi |
| 21 |
AML59P4512 |
Gallium Nitride (GaN) |
Microsemi |
| 22 |
AML618L4011 |
Gallium Nitride (GaN) |
Microsemi |
| 23 |
AML811P5011 |
Gallium Nitride (GaN) |
Microsemi |
| 24 |
AML811P5012 |
Gallium Nitride (GaN) |
Microsemi |
| 25 |
AN856 |
TRIPLE GALVANIC INSULATED HIGH SIDE DRIVING WITH TD310 |
SGS Thomson Microelectronics |
| 26 |
AONV070V65G1 |
Gallium Nitride (GaN) FETs Wide Bandgap (GaN/SiC) |
Alpha & Omega Semiconductor |
| 27 |
APL3015F3C |
F3 Made with Gallium Arsenide Infrared Emitting diodes. |
Kingbright Electronic |
| 28 |
APT2012SGC |
Gallium Phosphide Green Light Emitting Diode. |
Kingbright Electronic |
| 29 |
AT-10600 |
2-18 GHz General Purpose Gallium Arsenide FET |
AVANTEK |
| 30 |
AT-10650-1 |
2-16 GHz General Purpose Gallium Arsenide FET |
AVANTEK |
| | | |
